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Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Published online by Cambridge University Press:  31 January 2011

D. Bimberg ,
N.N. Ledentsov  and
J.A. Lott
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Abstract

GaAs-based continuous-wave quantum-dot vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 μm at 20°C with output power of 1.2 mW have been realized. Threshold currents approach 1–1.5 mA for 8-μm oxide apertures. Operating voltages are ∼2 V. Long operation lifetimes in excess of 5000 h at 50°C without degradation have been achieved. This article describes these breakthroughs, which are based on our development of complex self-organized growth technologies for defect-free stacked quantum dots.

Keywords

chemical vapor deposition (CVD)compound semiconductorscrystal growthcrystal structureelectrical propertiesmolecular-beam epitaxy (MBE)optoelectronic materialsoptical propertiesphotoluminescencequantum dots (QDs)transmission electron microscopy (TEM)vertical-cavity surface-emitting lasers (VCSELs).
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 7: Vertical-Cavity Surface-Emitting Lasers , July 2002 , pp. 531 - 537
Copyright
Copyright © Materials Research Society 2002

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