Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Krost, A.
and
Dadgar, A.
2002.
Heteroepitaxy of GaN on Si(111).
p.
41.
Cheng, Yang-Tse
Weiner, Anita M.
Wong, Curtis A.
Balogh, Michael P.
and
Lukitsch, Michael J.
2002.
Stress-induced growth of bismuth nanowires.
Applied Physics Letters,
Vol. 81,
Issue. 17,
p.
3248.
Krost, A.
and
Dadgar, A.
2002.
GaN-Based Devices on Si.
physica status solidi (a),
Vol. 194,
Issue. 2,
p.
361.
Tortorelli, P. F.
More, K.L.
Specht, E.D.
Pint, B.A.
and
Zschack, P.
2003.
Growth stress – microstructure relationships for alumina scales.
Materials at High Temperatures,
Vol. 20,
Issue. 3,
p.
303.
Petrov, I.
Barna, P. B.
Hultman, L.
and
Greene, J. E.
2003.
Microstructural evolution during film growth.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 21,
Issue. 5,
p.
S117.
Kelly, J. J.
Yang, N.
Headley, T.
and
Hachman, J.
2003.
Experimental Study of the Microstructure and Stress of Electroplated Gold for Microsystem Applications.
Journal of The Electrochemical Society,
Vol. 150,
Issue. 6,
p.
C445.
Dadgar, A.
Poschenrieder, M.
Reiher, A.
Bläsing, J.
Christen, J.
Krtschil, A.
Finger, T.
Hempel, T.
Diez, A.
and
Krost, A.
2003.
Reduction of stress at the initial stages of GaN growth on Si(111).
Applied Physics Letters,
Vol. 82,
Issue. 1,
p.
28.
Pranevičius, L.
Milčius, D.
Širvinskaite, V.
Norby, T.
Haugsrud, R.
Pranevičius, L. L.
and
Templier, C.
2003.
Formation of YSZ Films by Thermal Annealing of Y/Zr Layers in Air.
Surface Engineering,
Vol. 19,
Issue. 5,
p.
379.
Guduru, P.R.
Chason, E.
and
Freund, L.B.
2003.
Mechanics of compressive stress evolution during thin film growth.
Journal of the Mechanics and Physics of Solids,
Vol. 51,
Issue. 11-12,
p.
2127.
Dadgar, A.
Strittmatter, A.
Bläsing, J.
Poschenrieder, M.
Contreras, O.
Veit, P.
Riemann, T.
Bertram, F.
Reiher, A.
Krtschil, A.
Diez, A.
Hempel, T.
Finger, T.
Kasic, A.
Schubert, M.
Bimberg, D.
Ponce, F. A.
Christen, J.
and
Krost, A.
2003.
Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon.
physica status solidi (c),
p.
1583.
Rost, M. J.
Quist, D. A.
and
Frenken, J. W. M.
2003.
Grains, Growth, and Grooving.
Physical Review Letters,
Vol. 91,
Issue. 2,
Dadgar, A.
Poschenrieder, M.
Bläsing, J.
Contreras, O.
Bertram, F.
Riemann, T.
Reiher, A.
Kunze, M.
Daumiller, I.
Krtschil, A.
Diez, A.
Kaluza, A.
Modlich, A.
Kamp, M.
Christen, J.
Ponce, F.A.
Kohn, E.
and
Krost, A.
2003.
MOVPE growth of GaN on Si(111) substrates.
Journal of Crystal Growth,
Vol. 248,
Issue. ,
p.
556.
Floro, J. A.
Kotula, P. G.
Seel, S. C.
and
Srolovitz, D. J.
2003.
Origins of Growth Stresses in Amorphous Semiconductor Thin Films.
Physical Review Letters,
Vol. 91,
Issue. 9,
Srikar, V.T.
and
Spearing, S.M.
2003.
Materials selection in micromechanical design: an application of the ashby approach.
Journal of Microelectromechanical Systems,
Vol. 12,
Issue. 1,
p.
3.
Reiher, A.
Bläsing, J.
Dadgar, A.
Diez, A.
and
Krost, A.
2003.
Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers.
Journal of Crystal Growth,
Vol. 248,
Issue. ,
p.
563.
Oberhauser, P
and
Abermann, R
2003.
Influence of substrate properties on the growth of titanium films: part IV.
Thin Solid Films,
Vol. 434,
Issue. 1-2,
p.
24.
Schell, N
Jensen, T
Petersen, J.H
Andreasen, K.P
Bøttiger, J
and
Chevallier, J
2003.
The nanostructure evolution during and after magnetron deposition of Au films.
Thin Solid Films,
Vol. 441,
Issue. 1-2,
p.
96.
Pranevicius, L.
Pranevicius, L.L.
Milcius, D.
Muzard, S.
Templier, C.
and
Riviere, J.-P.
2003.
Mass-transport driven by surface instabilities under high-flux, low-energy nitrogen ion irradiation at elevated temperatures.
Vacuum,
Vol. 72,
Issue. 2,
p.
161.
Senez, Vincent
Hoffmann, Thomas
Le Duc, Philippe
and
Murray, Frank
2003.
Mechanical analysis of interconnected structures using process simulation.
Journal of Applied Physics,
Vol. 93,
Issue. 10,
p.
6039.
Gu, C. Z.
and
Jiang, X.
2003.
Evolution of intrinsic stress in nanocrystalline-diamond film deposited by continuous H+ ion bombardment.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Vol. 21,
Issue. 5,
p.
2114.