Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T04:09:44.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical-Guided-Wave Modulators

Published online by Cambridge University Press:  29 November 2013

R.A. Becker
Get access

Extract

Planar optical-guided-wave devices have been in existence for over 20 years. Two interesting, informative articles can be found in References 1 and 2. Much of the early work in guided-wave optics was on passive devices, but this was also when much of the theoretical understanding of optical-guided-wave (OGW) devices was developed. This theoretical understanding applies to active devices as well. It's interesting to note that the commercialization of passive, glass-based guided-wave devices has just occurred with product introductions by Corning & Nippon Sheet Glass. Active OGW devices (i.e., ones where the light properties can be altered with an applied voltage) have been reported since about 1975. In 1985, Crystal Technology, Inc. announced the first commercially available product—a high-speed, efficient, intensity modulator. Throughout the ten years in between, a huge amount of technical literature has been generated. Most of the work has centered on the Ti:LiNbO3 waveguide technology although several other material systems have been demonstrated as well.

Materials upon which optical-guided-wave modulators have been fabricated include: dielectrics such as lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and potassium titanyl phosphate (KTP); the III-V semiconductor compounds, gallium arsenide (GaAs) and indium phosphide (InP); and a variety of organic polymers. Of these materials, waveguides on LiNbO3 are clearly the most developed and are offered for sale commercially. For this reason I will concentrate on this material system while making comparisons to the other material systems when appropriate.

Type
Photonic Materials
Information
MRS Bulletin , Volume 13 , Issue 8 , August 1988 , pp. 21 - 23
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Miller, S.E., IEEE J. Quantum Electron. QE-8 (1972) p. 199.CrossRefGoogle Scholar
2.Tien, P.K., Appl. Opt. 10 (1971) p. 2395.CrossRefGoogle Scholar
3.Kaminow, I.P., Stulz, L.W., and Turner, E.H., Appl. Phys. Lett. 27 (1972) p. 555.CrossRefGoogle Scholar
4.Schmidt, R.V. and Kaminow, I.P., Appl. Phys. Lett. 25 (1974) p. 458.CrossRefGoogle Scholar
5.Jackel, J.L., Appl. Opt. 19 (1980) p. 1996.CrossRefGoogle Scholar
6.Bierlein, J.D., Ferretti, A., Brixner, L.H., and Hsu, W.Y., Appl. Phy. Lett. 50 (1987) p. 1216.CrossRefGoogle Scholar
7.Warig, S.Y., Lin, S.H., and Houng, Y.M., App. Phys. Lett. 51 (1987) p. 83.Google Scholar
8.Koren, V., Miller, B.I., Koch, T.L., Eisenstein, G., Tucker, R.S., Bar-Joseph, I., and Chemla, D.S., Appl. Phys. Lett. 51 (1987) p. 1132.CrossRefGoogle Scholar
9.Singer, K.D., John, J.E., Lalama, S.J., and Kuzyk, M.G., SPIE Proc. 704 (1986) p. 240.CrossRefGoogle Scholar
10.Weis, R.S. and Gaylord, T.K., Appl. Phys. A 37 (1985) p. 191.CrossRefGoogle Scholar
11.Alferness, R.C., IEEE J. Quantum Electron. QE-17 (1981) p. 191.Google Scholar
12.Holmes, R.J. and Smyth, P.M., J. Appl. Phys. 10 (1984) p. 3531.CrossRefGoogle Scholar
13.Glass, A.M., Opt. Eng. 17 (1978) p. 470.CrossRefGoogle Scholar
14.Becker, R.A., SPIE Proc. 578 (1985) p. 12.CrossRefGoogle Scholar
15.Harvey, G.T., Astfalk, G., Feldblum, A.Y., and Kassahum, B., IEEE J. Quantum Electron. QE-22 (1986) p. 939.CrossRefGoogle Scholar
16.Beaumont, A.R., Atkins, C.G., and Booth, R.C., Electron. Lett. 22 (1986) p. 1260.CrossRefGoogle Scholar
17.Becker, R.A. and Silva, W.J., SPIE Proc. 704 (1986) p. 214.Google Scholar
18. See, for example, SPIE Proc. 719 (1986).Google Scholar