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Novel contact structures for high mobility channel materials

Published online by Cambridge University Press:  18 February 2011

Jenny Hu ,
H.-S. Philip Wong  and
Krishna Saraswat
Jenny Hu
Affiliation:
Stanford University; [email protected]
H.-S. Philip Wong
Affiliation:
Stanford University
Krishna Saraswat
Affiliation:
Stanford University; [email protected]
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Abstract

A novel contact technique to reduce the effective Schottky barrier height on Ge and III–V high mobility semiconductors is described. Single metals are used in combination with an ultrathin dielectric to tune the metal/semiconductor barrier height toward zero by shifting or suppressing the strong Fermi-level pinning. Barrier height reduction in the metal-insulator-semiconductor (MIS) contact structure is verified through direct measurements and deduced from increased diode current and reduced contact resistance. Current demonstrations of the MIS contact have barriers as low as 0.05 eV for Er/SiN/n-Ge and 0.18 eV for Al/Al2O3/n-GaAs. The underlying physics is discussed along with the dependence of the minimum achievable contact resistance and barrier height on the metal, dielectric material, dielectric thickness, and substrate doping. For Ge, the MIS contact provides a possible solution to the low n-type Ge dopant solubility problem and allows for the fabrication of Schottky barrier field-effect transistors. For III–V semiconductors, the MIS contact allows for the use of a non-alloyed contact that is crucial for the scalability of III–V metal oxide semiconductor field-effect transistors.

Type
Research Article
Information
MRS Bulletin , Volume 36 , Issue 2: Contact materials for nanoelectronics , February 2011 , pp. 112 - 120
Copyright
Copyright © Materials Research Society 2011

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