Hostname: page-component-f554764f5-68cz6 Total loading time: 0 Render date: 2025-04-23T06:04:33.443Z Has data issue: false hasContentIssue false
  • English
  • Français

New materials for post-Si computing: Ge and GeSn devices

Published online by Cambridge University Press:  14 August 2014

Suyog Gupta ,
Xiao Gong ,
Rui Zhang ,
Yee-Chia Yeo ,
Shinichi Takagi  and
Krishna C. Saraswat
Suyog Gupta
Affiliation:
IBM T.J. Watson Research Center, USA; [email protected]
Xiao Gong
Affiliation:
Electrical and Computer Engineering, National University of Singapore, Singapore; [email protected]
Rui Zhang
Affiliation:
Department of Information Science and Electronic Engineering, Zhejiang University, China; [email protected]
Yee-Chia Yeo
Affiliation:
Electrical and Computer Engineering, National University of Singapore, Singapore; [email protected]
Shinichi Takagi
Affiliation:
Department of Electrical Engineering and Information Systems, University of Tokyo, Japan; [email protected]
Krishna C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, USA; [email protected]
Get access

Abstract

As Si-transistor technology advances beyond the 10 nm node, the device research community is increasingly looking into the possibility of replacing Si with novel, high mobility materials as the transistor channel. Among several possible candidate materials, germanium and germanium-tin alloys (GeSn) have emerged as strong contenders for the next generation of complementary metal oxide semiconductor (CMOS) transistors. This article presents a comprehensive overview of the state of the art in Ge and GeSn transistor research. We address several key material challenges involved in fabricating high-performance Ge/GeSn-based CMOS transistors, such as gate stack formation and achieving low-resistance contacts to transistor source/drain regions. Using Ge/GeSn as channel materials, we present a FinFET-based, Si-compatible CMOS solution for device dimensions expected in the 7 nm technology node, discuss the practical challenges involved in realizing this design, and highlight directions for future research.

Keywords

GeSnnanoscale
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 8: New Materials for Post-Si Computing , August 2014 , pp. 678 - 686
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

Ghani, T., Armstrong, M., Auth, C., Bost, M., Charvat, P., Glass, G., Hoffmann, T., Johnson, K., Kenyon, C., Klaus, J., McIntyre, B., Mistry, K., Murthy, A., Sandford, J., Silberstein, M., Sivakumar, S., Smith, P., Zawadzki, K., Thompson, S., Bohr, M., Proc. IEEE Int. Electron Devices Meeting 11.6.1 (2003).Google Scholar
Mistry, K., Allen, C., Auth, C., Beattie, B., Bergstrom, D., Bost, M., Brazier, M., Buehler, M., Cappellani, A., Chau, R., Choi, C.-H., Ding, G., Fischer, K., Ghani, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., He, J., Hicks, J., Huessner, R., Ingerly, D., Jain, P., James, R., Jong, L., Joshi, S., Kenyon, C., Kuhn, K., Lee, K., Liu, H., Maiz, J., Mcintyre, B., Moon, P., Neirynck, J., Pae, S., Parker, C., Parsons, D., Prasad, C., Pipes, L., Prince, M., Ranade, P., Reynolds, T., Sandford, J., Shifren, L., Sebastian, J., Seiple, J., Simon, D., Sivakumar, S., Smith, P., Thomas, C., Troeger, T., Vandervoorn, P., Williams, S., Zawadzki, K., Proc. IEEE Int. Electron Devices Meeting 247 (2007).Google Scholar
Auth, C., Allen, C., Blattner, A., Bergstrom, D., Brazier, M., Bost, M., Buehler, M., Chikarmane, V., Ghani, T., Glassman, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., Hentges, P., Heussner, R., Hicks, J., Ingerly, D., Jain, P., Jaloviar, S., James, R., Jones, D., Jopling, J., Joshi, S., Kenyon, C., Liu, H., McFadden, R., Mcintyre, B., Neirynck, J., Parker, C., Pipes, L., Post, I., Pradhan, S., Prince, M., Ramey, S., Reynolds, T., Roesler, J., Sandford, J., Seiple, J., Smith, P., Thomas, C., Towner, D., Troeger, T., Weber, C., Yashar, P., Zawadzki, K., Mistry, K., Proc. IEEE Symp. on VLSI Technol. 131 (2012).Google Scholar
Hisamoto, D., Lee, W.-C., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, T.-J., Bokor, J., Chenming, H., IEEE Trans. Electron Devices 47 (12), 2320 (2000).Google Scholar
Kuhn, K., IEEE Trans. Electron Devices 59 (7), 1813 (2012).CrossRefGoogle Scholar
Radosavljevic, M., Chu-Kung, B., Corcoran, S., Dewey, G., Hudait, M.K., Fastenau, J.M., Kavalieros, J., Liu, W.K., Lubyshev, D., Metz, M., Millard, K., Mukherjee, N., Rachmady, W., Shah, U., Chau, R., Proc. IEEE Int. Electron Devices Meeting 319 (2009).Google Scholar
Del Alamo, J.A., Nature 479, 317 (2011).CrossRefGoogle Scholar
Gupta, S., Chen, R., Magyari-Kope, B., Lin, H., Yang, B., Nainani, A., Nishi, Y., Harris, J.S., Saraswat, K.C., Proc. IEEE Int. Electron Devices Meeting 16.6.1 (2011).Google Scholar
Han, G., Su, S., Zhan, C., Zhou, Q., Yang, Y., Wang, L., Guo, P., Wang, W., Wong, C.P., Shen, Z.X., Cheng, B., Yeo, Y.-C., Proc. IEEE Int. Electron Devices Meeting 402 (2011).Google Scholar
Gupta, S., Huang, Y.-C., Kim, Y., Sanchez, E., Saraswat, K.C., IEEE Electron Devices Lett. 34 (7), 831 (2013).CrossRefGoogle Scholar
Kim, H., Chui, C.-O., Saraswat, K.C., McIntyre, P.C., Appl. Phys. Lett. 83, 2647 (2003).CrossRefGoogle Scholar
Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Li, M.F., Balasubramanian, N., Chin, A., Kwong, D.-L., Appl. Phys. Lett. 85, 4127 (2004).CrossRefGoogle Scholar
De Jaeger, B., Bonzom, R., Leys, F., Richard, O., Van Steenbergen, J., Winderickx, G., Van Moorhem, E., Raskin, G., Letertre, F., Billon, T., Meuris, M., Heyns, M., Microelectron. Eng. 80, 26 (2005).CrossRefGoogle Scholar
Taoka, N., Harada, M., Yamashita, Y., Yamamoto, T., Sugiyama, N., Takagi, S., Appl. Phys. Lett. 92, 113511 (2008).CrossRefGoogle Scholar
Takagi, S., Maeda, T., Taoka, N., Nishizawa, M., Morita, Y., Ikeda, K., Yamashita, Y., Nishikawa, M., Kumagai, H., Nakane, R., Sugahara, S., Sugiyama, N., Microelectron. Eng. 84, 2314 (2007).CrossRefGoogle Scholar
Fukuda, Y., Ueno, T., Hirono, S., Hashimoto, S., Jpn. J. Appl. Phys., Pt. 1 44, 6981 (2005).CrossRefGoogle Scholar
Delabie, A., Bellenger, F., Houssa, M., Conard, T., Van Elshocht, S., Caymax, M., Heyns, M., Meuris, M., Appl. Phys. Lett. 91, 082904 (2007).CrossRefGoogle Scholar
Takahashi, T., Nishimura, T., Chen, L., Sakata, S., Kita, K., Toriumi, A., Proc. IEEE Int. Electron Devices Meeting 697 (2007).Google Scholar
Kuzum, D., Pethe, A.J., Krishnamohan, T., Oshima, Y., Sun, Y., McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C., Proc. IEEE Int. Electron Devices Meeting 723 (2007).Google Scholar
Kita, K., Suzuki, S., Nomura, H., Takahashi, T., Nishimura, T., Toriumi, A., Jpn. J. Appl. Phys. 47, 2349 (2008).CrossRefGoogle Scholar
Matsubara, H., Sasada, T., Takenaka, M., Takagi, S., Appl. Phys. Lett. 93, 032104 (2008).CrossRefGoogle Scholar
Sasada, T., Nakakita, Y., Takenaka, M., Takagi, S., J. Appl. Phys. 106, 073716 (2009).CrossRefGoogle Scholar
Morii, K., Iwasaki, T., Nakane, R., Takenaka, M., Takagi, S., Proc. IEEE Int. Electron Devices Meeting 681 (2009).Google Scholar
Lee, C.H., Nishimura, T., Saido, N., Nagashio, K., Kita, K., Toriumi, A., Proc. IEEE Int. Electron Devices Meeting 457 (2009).Google Scholar
Nishimura, T., Lee, C.H., Wang, S.K., Tabata, T., Kita, K., Nagashio, K., Toriumi, A., Proc. IEEE Symp. VLSI Technol. 209 (2010).Google Scholar
Morii, K., Iwasaki, T., Nakane, R., Takenaka, M., Takagi, S., IEEE Electron Devices Lett. 31, 1092 (2010).CrossRefGoogle Scholar
Nakakita, Y., Nakakne, R., Sasada, T., Takenaka, M., Takagi, S., Jpn. J. Appl. Phys. 50, 010109 (2011).CrossRefGoogle Scholar
Lee, C.H., Nishimura, T., Nagashio, K., Kita, K., Toriumi, A., IEEE Trans. Electron Devices 58, 1295 (2011).Google Scholar
Zhang, R., Iwasaki, T., Taoka, N., Takenaka, M., Takagi, S., J. Electrochem. Soc. 158, G178 (2011).CrossRefGoogle Scholar
Hosoi, T., Kutsuki, K., Okamoto, G., Saito, M., Shimura, T., Watanabe, H., Appl. Phys. Lett. 94, 202112 (2009).CrossRefGoogle Scholar
Maeda, T., Yasuda, T., Nishizawa, M., Miyata, N., Morita, Y., Takagi, S., Appl. Phys. Lett. 85, 3181 (2004).CrossRefGoogle Scholar
Kutsuki, K., Okamoto, G., Hosoi, T., Shimura, T., Watanabe, H., Jpn. J. Appl. Phys. 47, 2415 (2008).CrossRefGoogle Scholar
Zhang, R., Iwasaki, T., Taoka, N., Takenaka, M., Takagi, S., Appl. Phys. Lett. 98, 112902 (2011).CrossRefGoogle Scholar
Zhang, R., Iwasaki, T., Taoka, N., Takenaka, M., Takagi, S., Proc. IEEE Symp. on VLSI Technol. 56 (2011).Google Scholar
Zhang, R., Taoka, N., Huang, P., Takenaka, M., Takagi, S., Proc. IEEE Int. Electron Device Meeting 642 (2011).Google Scholar
Zhang, R., Iwasaki, T., Taoka, N., Takenaka, M., Takagi, S., IEEE Trans. Electron Devices 59, 335 (2012).CrossRefGoogle Scholar
Zhang, R., Huang, P.C., Taoka, N., Takenaka, M., Takagi, S., Proc. IEEE Symp. on VLSI Technol. 161 (2012).Google Scholar
Takagi, S., Zhang, R., Takenaka, M., Microelectron. Eng. 109, 389 (2013).CrossRefGoogle Scholar
Gong, X., Han, G., Bai, F., Su, S., Guo, P., Yang, Y., Cheng, R., Zhang, D., Zhang, G., Xue, C., Cheng, B., Pan, J., Zhang, Z., Tok, E.-S., Antoniadis, D., Yeo, Y.-C., IEEE Electron Devices Lett. 34 (3), 339 (2013).CrossRefGoogle Scholar
Zhan, C., Wang, W., Gong, X., Guo, P., Liu, B., Yang, Y., Han, G., Yeo, Y.-C., Proc. Symp. VLSI Technol., Systems and Applications (VLSI-TSA), IEEE (Hsinchu, Taiwan, 2013), doi: 10.1109/VLSI-TSA.2013.6545607.CrossRefGoogle Scholar
Guo, P., Han, G., Gong, X., Liu, B., Yang, Y., Wang, W., Zhou, Q., Pan, J., Zhang, Z., Tok, E.-S., Yeo, Y.-C., J. Appl. Phys. 114 (4), 044510 (2013).CrossRefGoogle Scholar
Gupta, S., Vincent, B., Yang, B., Lin, D., Gencarelli, F., Lin, J.-Y.J., Chen, R., Richard, O., Bender, H., Magyari-Kope, B., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K.C., Proc. IEEE Int. Electron Devices Meeting 16.2.1 (2012).Google Scholar
Connelly, D., Faulkner, C., Clifton, P.A., Grupp, D.E., Appl. Phys. Lett. 88, 012105 (2006).CrossRefGoogle Scholar
Lieten, R.R., Degroote, S., Kuijk, M., Borghs, G., Appl. Phys. Lett. 92, 022106 (2008).CrossRefGoogle Scholar
Nishimura, T., Kita, K., Toriumi, A., Appl. Phys. Express 1, 051406 (2008).CrossRefGoogle Scholar
Roy, A.M., Lin, J.Y.J., Saraswat, K.C., IEEE Electron Devices Lett. 31 (9), 1077 (2010).CrossRefGoogle Scholar
Shine, G., Saraswat, K.C., Proc. IEEE SISPAD 69 (2013).Google Scholar
Lin, J.-Y.J., Roy, A.M., Nainani, A., Sun, Y., Saraswat, K.C., Appl. Phys. Lett. 98, 092113 (2011).CrossRefGoogle Scholar
Manik, P.P., Mishra, R.K., Kishore, V.P., Ray, P., Nainani, A., Huang, Y.-C., Abraham, M.C., Ganguly, U., Lodha, S., Appl. Phys. Lett. 101, 182105 (2012).CrossRefGoogle Scholar
Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C., IEEE Electron Devices Lett. 33 (5), 634 (2012).CrossRefGoogle Scholar
Taoka, N., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Takagi, S., J. Appl. Phys. 108, 104511 (2010).CrossRefGoogle Scholar
Takagi, S., Zhang, R., Kim, S.-H., Taoka, N., Yokoyama, M., Suh, J.-K., Suzuki, R., Takenaka, M., Proc. IEEE Int. Electron Device Meeting 505 (2012).Google Scholar
Zhang, R., Huang, P.-C., Lin, J.-C., Taoka, N., Takenaka, M., Takagi, S., IEEE Trans. Electron Devices 60 (3), 927 (2013).CrossRefGoogle Scholar
Zhang, R.Lin, J.-C., Yu, X., Takenaka, M., Takagi, S., IEEE Trans. Electron Devices 61 (2), 416 (2012).CrossRefGoogle Scholar
Lee, C.H., Nishimura, T., Tabata, T., Lu, C., Zhang, W.F., Nagashio, K., Toriumi, A., Proc. IEEE Int. Electron Device Meeting 32 (2013).Google Scholar
Zhang, R., Huang, P.-C., Lin, J.-C., Takenaka, M., Takagi, S., Proc. IEEE Int. Electron Device Meeting 371 (2012).Google Scholar
Zhang, R., Lin, J-C., Yu, X., Takenaka, M., Takagi, S., Proc. IEEE Symp. on VLSI Technol. T26 (2013).Google Scholar
Gupta, S., Vincent, B., Lin, D.H.C., Gunji, M., Firrincieli, A., Gencarelli, F., Magyari-Kope, B., Yang, B., Douhard, B., Delmotte, J., Franquet, A., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K.C., Proc. IEEE Symp. on VLSI Technol. 95 (2012).Google Scholar
Han, G., Su, S., Wang, L., Wang, W., Gong, X., Yang, Y., Ivana, , Guo, P., Guo, C., Zhang, G., Pan, J., Zhang, Z., Xue, C., Cheng, B., Yeo, Y.-C., Proc. IEEE Symp. on VLSI Technol. 97 (2012).Google Scholar
Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E., Cheng, B., Han, G., Yeo, Y.-C., Proc. IEEE Symp. on VLSI Technol. 99 (2012).Google Scholar
Gong, X., Han, G., Su, S., Cheng, R., Guo, P., Bai, F., Yang, Y., Zhou, Q., Liu, B., Goh, K.-H., Zhang, G., Xue, C., Cheng, B., Yeo, Y.-C., Proc. IEEE Symp. on VLSI Technol. 34 (2013).Google Scholar
Lieten, R.R., Maeda, T., Jevasuwan, W., Hattori, H., Uchida, N., Miura, S., Tanaka, M., Locquet, J.-P., Appl. Phys. Express 6, 101301 (2013).CrossRefGoogle Scholar
Riddet, C., Watling, J.R., Chan, K., Parker, E.H.C., Whall, T.E., Leadley, D.R., Asenov, A., IEEE Trans. Electron Devices 59 (7), 1878 (2012).CrossRefGoogle Scholar
Gupta, S., Moroz, V., Smith, L., Lu, Q., Saraswat, K.C., Proc. Int. Electron Devices Meeting 26.3.1 (2013).Google Scholar
Gupta, S., Moroz, V., Smith, L., Lu, Q., Saraswat, K.C., IEEE Trans. Electron Devices 61 (5), 1222 (2014).CrossRefGoogle Scholar
International Technology Roadmap for Semiconductors (2012); http://public.itrs.net/.Google Scholar
Vincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D.H., Hansen, O., Henrichsen, H.H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., Caymax, M., Appl. Phys. Lett. 99 (15), 152103 (2011).CrossRefGoogle Scholar
Bauer, M., Taraci, J., Tolle, J., Chizmeshya, A.V.G., Zollner, S., Smith, D.J., Menendez, J., Hu, C., Kouvetakis, J., Appl. Phys. Lett, 81 (16), 2992 (2002).CrossRefGoogle Scholar
Lieten, R.R., Seo, J.W., Decoster, S., Vantomme, A., Peters, S., Bustillo, K.C., Haller, E.E., Menghini, M., Locquet, J.-P., Appl. Phys. Lett. 102, 052106 (2013).CrossRefGoogle Scholar
Chen, R., Huang, Y.-C., Gupta, S., Lin, A.C., Sanchez, E., Kim, Y., Saraswat, K.C., Kamins, T.I., Harris, J.S., J. Cryst. Growth 365, 29 (2013).CrossRefGoogle Scholar
Jang, S.-M., Liao, K., Reif, R., J. Electrochem. Soc. 142 (10), 3520 (1995).CrossRefGoogle Scholar
Huang, G.W., Chen, L.P., Chou, C.T., Chen, K.M., Tseng, H.C., Tasi, W.C., Chang, C.Y., J. Appl. Phys. 81 (1), 205 (1997).CrossRefGoogle Scholar
Carroll, M.Yang, M., Strum, J.C., Büyüklimanli, T., J. Electrochem. Soc. 147 (9), 3541 (2000).CrossRefGoogle Scholar
Hartmann, J.M., Py, M., Barnes, J.P., Prévitali, B., Batude, P., Billon, T., J. Cryst. Growth 327, 68 (2011).CrossRefGoogle Scholar