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InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours

Published online by Cambridge University Press:  29 November 2013

Shuji Nakamura
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Abstract

The following article, originally published in Materials Research Society Proceedings Volume 482, is based on the address that Shuji Nakamura, recipient of an MRS Medal Award, presented during Symposium X of the 1997 MRS Fall Meeting. Nakamura was recognized for “the development of lattice-mismatched GaN based heteroepitaxy and its application to the creation of blue and green light-emitting diodes and short wave-length laser diodes.”

Type
Special Features
Information
MRS Bulletin , Volume 23 , Issue 5 , May 1998 , pp. 37 - 43
Copyright
Copyright © Materials Research Society 1998

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References

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