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History of SIMOX Material

Published online by Cambridge University Press:  29 November 2013

Katsutoshi Izumi
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Extract

Watanabe and Tooi first reported on the formation of silicon oxide by oxygenion implantation into silicon in 1966. Further investigations of such oxygen-implanted oxide layers have been carried out by several workers, with the result that the oxide has equivalent isolation characteristics to those for thermally grown silicon oxide. Practical applications of the oxygen-implanted oxide to semiconductor devices have been reported by only a few workers, with a suggestion of their usefulness. Unfortunately Watanabe and Tooi's work has not been followed by additional silicon-on-insulator (SOI) studies.

In 1978 Izumi, Doken, and Ariyoshi succeeded in fabricating a complementary-metal-oxide-semiconductor (CMOS) ring oscillator using a buried SiO2 layer formed by oxygenion (16O+) implantation into silicon. They named the new SOI technology “SIMOX,” which is short for separation by implanted oxygen. Since then Izumi and his research group have continued their study of SIMOX technology.

Type
Siucon-on-Insulator Technology
Information
MRS Bulletin , Volume 23 , Issue 12 , December 1998 , pp. 20 - 24
Copyright
Copyright © Materials Research Society 1998

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References

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