Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T08:35:20.622Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Resolution Imaging of Liquid Structures: Wetting and Capillary Phenomena at the Nanometer Scale

Published online by Cambridge University Press:  29 November 2013

Miquel Salmeron ,
Lei Xu ,
Jun Hu  and
Qing Dai
Get access

Extract

Scanning-probe microscopies (SPMs) have experienced an impressive development in the last 10 years, such that obtaining atomically resolved images of surfaces is now routine. The scanning tunneling and atomic force microscopes (STM and AFM) are the most widely known representatives of the growing family of SPMs. With these two instruments, which were invented more than 15 years ago, the atomic structure of the surfaces of solid materials can be imaged in real space and, very importantly, in virtually any environment: vacuum, air, reactive gas atmospheres, and under liquid. These two circumstances (atomic resolution and lack of environmental constraints) make SPM unique among microscopies. One frontier remains unconquered however: the imaging of liquid surfaces. Even though liquids constitute a very large fraction of all materials, the study of their microscopic morphology has been limited to the diffraction limit of visible optical microscopy, a situation that has remained unchanged for decades. Techniques capable of breaking this resolution limit are welcomed. One such technique was recently developed in our laboratory, which we call scanning-polarization-force microscopy (SPFM). It did not result from the discovery of any new physical principle but from the simple application of well-known methods and techniques, in combination with the AFM, to the field of liquid surface structures. In this article, we will first summarize the working principle of SPFM. Then we will show how we have applied it to the investigation of liquid films and droplets of nanometer dimensions and their interactions with solid supports.

Type
Nanoscale Characterization of Materials
Information
MRS Bulletin , Volume 22 , Issue 8 , August 1997 , pp. 36 - 41
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Binning, G., Rohrer, H., Gerber, Ch., and Weibel, E., Phys. Rev. Lett. 50 (1983) p. 120.CrossRefGoogle Scholar
2. For a review, see Ogletree, D.F. and Salmeron, M., Prog. Solid-State Chem. 20 (1990) p. 2335.CrossRefGoogle Scholar
3.Binning, G., Quate, C.F., and Gerber, Ch., Phys. Rev. Lett. 56 (1986) p. 930.CrossRefGoogle Scholar
4. For a review, see Meyer, E. and Heinzelmann, H., in Scanning Tunneling Microscopy II, edited by Wiesendanger, R. and Guntherodt, H-J. (Springer-Verlag, New York, 1992) p. 99.CrossRefGoogle Scholar
5.Marchon, B., Bernhardt, P., Bussell, M.E., Somorjai, G.A., Salmeron, M., and Siekhaus, W., Phys. Rev. Lett. 60 (1988) p. 1166.CrossRefGoogle Scholar
6.McIntyre, B.J., Salmeron, M., and Somorjai, G.A., Rev. Sci. Instrum. 64 (3) p. 687.CrossRefGoogle Scholar
7.Sonnenfeld, R. and Hansma, P.K., Science 232 (1986) p. 211.CrossRefGoogle Scholar
8.Hu, J., Xiao, X-D., and Salmeron, M., Appl. Phys. Lett. 67 (4) (1995) p. 476.CrossRefGoogle Scholar
9.Martin, Y., Abraham, D.W., and Wickramasinghe, H.K., Appl. Phys. Lett. 52 (1988) p. 1103.CrossRefGoogle Scholar
10.Williams, C.C., Hough, W.P., and Rishton, S.A., Appl. Phys. Lett. 55 (1989) p. 203.CrossRefGoogle Scholar
11.Yokoyama, H. and Inoue, T., Thin Solid Films 242 (1994) p. 33.CrossRefGoogle Scholar
12.Hu, J., Xiao, X-D., Ogletree, D.F., and Salmeron, M., Science 268 (1995) p. 267.CrossRefGoogle Scholar
13.Beaglehole, D. and Christenson, H.K., J. Phys. Chem. 96 (1992) p. 3395.CrossRefGoogle Scholar
14.Hu, J., Xiao, X-D., Ogletree, D.F., and Salmeron, M., Surf. Sci. 344 (1995) p. 221.CrossRefGoogle Scholar
15.Hu, J., Carpick, R.W., Salmeron, M., and Xiao, X-D., J. Vac. Sci. Technol. B 14 (2) (1996) p. 1341.CrossRefGoogle Scholar
16.Dai, Q., Hu, J., Freedman, A., Robinson, G.N., and Salmeron, M., J. Phys. Chem. 100 (1996) p. 9.CrossRefGoogle Scholar
17.Dai, Q., Freedman, A., and Robinson, G.N., J. Electrochem. Soc. 142 (1995) p. 4063.CrossRefGoogle Scholar
18.De Gennes, P.G., Rev. Mod. Phys. 57 (1985) p. 828.CrossRefGoogle Scholar