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Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics

Published online by Cambridge University Press:  31 January 2011

Chris Palmstrøm
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Abstract

Ferromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

Keywords

crystallographic structureepitaxial Heusler alloysintermetallic compoundsmagnetic propertiesmolecular-beam epitaxy (MBE)semiconductorssingle crystalsspin-polarized materialsspintronicsthin films
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 10: New Materials for Spintronics , October 2003 , pp. 725 - 728
Copyright
Copyright © Materials Research Society 2003

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References

1.Webster, P.J., J. Appl. Phys. 52 (1981) p. 2040.CrossRefGoogle Scholar
2.Webster, P.J., J. Phys. Chem. Solids 32 (1971) p. 1221.CrossRefGoogle Scholar
3.Buschow, K.H.J., van Engen, P.G., and Jongebreur, R., J. Magn. Magn. Mater. 38 (1983) p. 1.CrossRefGoogle Scholar
4.Brown, P.J., Neumann, K.U., Webster, P.J., and Ziebeck, K.R.A., J. Phys.: Condens. Matter 12 (2000) p. 1827.Google Scholar
5.de Groot, R.A., Mueller, F.M., van Engen, P.G., and Buschow, K.H.J., Phys. Rev. Lett. 50 (1983) p. 2024.CrossRefGoogle Scholar
6.Hanssen, K.E.H.M. and Mijnarends, P.E., Phys. Rev. B 34 (1986) p. 5009.CrossRefGoogle Scholar
7.Fujii, S., Ishida, S., and Asano, S., J. Phys. Soc. Jpn. 58 (1989) p. 3657.CrossRefGoogle Scholar
8.Fujii, S., Sugimura, S., Ishida, S., and Asano, S., J. Phys.: Condens. Matter 2 (1990) p. 8583.Google Scholar
9.Fujii, S., Ishida, S., and Asano, S., J. Phys. Soc. Jpn. 63 (1994) p. 1881.CrossRefGoogle Scholar
10.Fujii, S., Ishida, S., and Asano, S., J. Phys. Soc. Jpn. 64 (1995) p. 185.CrossRefGoogle Scholar
11.Galanakis, I., Dederichs, P.H., and Papanikolaou, N., Phys. Rev. B 66 134428 (2002).CrossRefGoogle Scholar
12.Galanakis, I., Dederichs, P.H., and Papanikolaou, N., Phys. Rev. B 66 174429 (2002).CrossRefGoogle Scholar
13.Hanssen, K.E.H.M., Mijnarends, P.E., Rabou, L.P.L.M., and Buschow, K.H.J., Phys. Rev. B 42 (1990) p. 1533.CrossRefGoogle Scholar
14.Raphael, M.P., Ravel, B., Huang, Q., Willard, M.A., Cheng, S.F., Das, B.N., Stroud, R.M., Bussmann, K.M., Claassen, J.H., and Harris, V.G., Phys. Rev. B 66 104429 (2002).CrossRefGoogle Scholar
15.Orgassa, D., Fujiwara, H., Schulthess, T.C., and Butler, W.H., Phys. Rev. B 60 (1999) p. 13237.CrossRefGoogle Scholar
16.Ishida, S., Masaki, T., Fujii, S., and Asano, S., Physica B 245 (1998) p. 1.CrossRefGoogle Scholar
17.Ishida, S., Fujii, S., Nagayoshi, H., and Asano, S., Physica B 254 (1998) p. 157.CrossRefGoogle Scholar
18.Galanakis, I., J. Phys.: Condens. Matter 14 (2002) p. 6329.Google Scholar
19.de Wijs, G.A. and de Groot, R.A., Phys. Rev. B 64 020402 (2001).CrossRefGoogle Scholar
20.Ristoiu, D., Nozieres, J.P., Borca, C.N., Komesu, T., Jeong, H.K., and Dowben, P.A., Euro-phys. Lett. 49 (2000) p. 624.CrossRefGoogle Scholar
21.Soulen, R.J. Jr., Byers, J.M., Osofsky, M.S., Nadgorny, B., Ambrose, T., Cheng, S.F., Broussard, P.R., Tanaka, C.T., Nowak, J., Moodera, J.S., Barry, A., and Coey, J.M.D., Science 282 (1998) p. 85.CrossRefGoogle Scholar
22.Tanaka, C.T., Nowak, J., and Moodera, J.S., J. Appl. Phys. 86 (1999) p. 6239.CrossRefGoogle Scholar
23.Soulen, R.J. Jr., Carr, D.M., Dong, J.W., Lu, J., and Palmstrøm, C.J. (unpublished).Google Scholar
24.Kilian, K.A. and Victora, R.H., J. Appl. Phys. 87 (2000) p. 7064.CrossRefGoogle Scholar
25.Rashba, E.I., Phys. Rev. B 62 (2000) p. R16267.CrossRefGoogle Scholar
26.Turban, P., Andrieu, S., Kierren, B., Snoeck, E., Teodorescu, C., and Traverse, A., Phys. Rev. B 64 134417 (2002).CrossRefGoogle Scholar
27.Van Roy, W., De Boeck, J., Brijs, B., and Borghs, G., Appl. Phys. Lett. 77 (2000) p. 4190.CrossRefGoogle Scholar
28.Wojcik, M., Van Roy, W., Jedryka, E., Nadolski, S., Borghs, G., and De Boeck, J., J. Magn. Magn. Mater. 240 (2002) p. 414.CrossRefGoogle Scholar
29.Dong, J.W., Chen, L.C., Palmstrøm, C.J., James, R.D., and McKernan, S., Appl. Phys. Lett. 75 (1999) p. 1443.CrossRefGoogle Scholar
30.Dong, J.W., Chen, L.C., Xie, J.Q., Müller, T.A.R., Carr, D.M., Palmstrøm, C.J., McKernan, S., Pan, Q., and James, R.D., J. Appl. Phys. 88 (2000) p. 7357.CrossRefGoogle Scholar
31.Dong, J.W., Lu, J., Xie, J.Q., Chen, L.C., James, R.D., McKernan, S., and Palmstrøm, C.J., Physica E 10 (2001) p. 428.CrossRefGoogle Scholar
32.Dong, X.Y., Dong, J.W., Xie, J.Q., Shih, T.C., McKernan, S., Leighton, C., and Palmstrøm, C.J., J. Cryst. Growth 254 (2003) p. 384.CrossRefGoogle Scholar
33.Lu, J., Dong, J.W., Xie, J.Q., McKernan, S., Palmstrøm, C.J., and Xin, Y., Appl. Phys. Lett. 83 (2003) p. 2393.CrossRefGoogle Scholar
34.Xie, J.Q., Dong, J.W., Lu, J., Palmstrøm, C.J., and McKernan, S., Appl. Phys. Lett. 79 (2001) p. 1003.CrossRefGoogle Scholar
35.Ambrose, T., Krebs, J.J., and Prinz, G.A., Appl. Phys. Lett. 76 (2000) p. 3280.CrossRefGoogle Scholar
36.Godlevsky, V.V. and Rabe, K.M., Phys. Rev. B 63 134407 (2001).CrossRefGoogle Scholar