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Electrolyte gated single-crystal organic transistors to examine transport in the high carrier density regime

Published online by Cambridge University Press:  14 January 2013

Wei Xie  and
C. Daniel Frisbie
Wei Xie
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota; [email protected]
C. Daniel Frisbie
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota; [email protected]
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Abstract

Recent advances in understanding electronic charge transport in organic semiconductors are motivated by the fast growth of organic electronics. In particular, organic single crystals provide an ideal test bed for systematic studies of charge transport, with rapid progress in single-crystal-based field-effect transistors in the past few years. Charge densities induced in crystals by the field-effect have been in the low limit regime (1010 cm–2 to 1013 cm–2) mainly due to the difficulties of boosting gate dielectric capacitance. Consequently, the transport physics of organic crystals in the high-charge-density regime has not been systematically explored. With the emergence of the electrolyte gating technique, ultrahigh charge densities (1013 cm–2 to 1015 cm–2) can be achieved. In this article, we first discuss the general methodologies of applying electrolyte gating to organic crystals. We then review several recent research highlights, including the maximization of charge density and improvement of carrier mobility, enhanced understanding of the mobility-charge density relationship, and observations of ambipolar transport and a novel conductivity peak that occurs only at high charge densities. These recent achievements are extremely important for ongoing efforts to realize novel transport behavior in organic crystals, such as superconductivity and the insulator-to-metal transition.

Keywords

Organiccrystalelectrical propertiessemiconductingdevices
Type
Research Article
Information
MRS Bulletin , Volume 38 , Issue 1: Organic single crystals , January 2013 , pp. 43 - 50
Copyright
Copyright © Materials Research Society 2013

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