Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Ehrentraut, Dirk
and
Fukuda, Tsuguo
2010.
Ammonothermal crystal growth of gallium nitride – A brief discussion of critical issues.
Journal of Crystal Growth,
Vol. 312,
Issue. 18,
p.
2514.
Feneberg, Martin
Thonke, Klaus
Wunderer, Thomas
Lipski, Frank
and
Scholz, Ferdinand
2010.
Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates.
Journal of Applied Physics,
Vol. 107,
Issue. 10,
Scholz, Ferdinand
Wunderer, Thomas
Feneberg, Martin
Thonke, Klaus
Chuvilin, Andrei
Kaiser, Ute
Metzner, Sebastian
Bertram, Frank
and
Christen, Jürgen
2010.
GaInN‐based LED structures on selectively grown semi‐polar crystal facets.
physica status solidi (a),
Vol. 207,
Issue. 6,
p.
1407.
Ehrentraut, Dirk
and
Fukuda, Tsuguo
2010.
The Ammonothermal Crystal Growth of Gallium Nitride—A Technique on the Up Rise.
Proceedings of the IEEE,
Vol. 98,
Issue. 7,
p.
1316.
Vennéguès, Philippe
Zhu, Tiankai
Martin, Denis
and
Grandjean, Nicolas
2010.
Study of the epitaxial relationships between III-nitrides and M-plane sapphire.
Journal of Applied Physics,
Vol. 108,
Issue. 11,
Ohta, Hiroaki
DenBaars, Steven P.
and
Nakamura, Shuji
2010.
Future of group-III nitride semiconductor green laser diodes [Invited].
Journal of the Optical Society of America B,
Vol. 27,
Issue. 11,
p.
B45.
Paskova, Tanya
Hanser, Drew A
and
Evans, Keith R
2010.
GaN Substrates for III-Nitride Devices.
Proceedings of the IEEE,
Vol. 98,
Issue. 7,
p.
1324.
Sun, Qian
Yerino, Christopher D.
Leung, Benjamin
Han, Jung
and
Coltrin, Michael E.
2011.
Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN.
Journal of Applied Physics,
Vol. 110,
Issue. 5,
Porowski, Sylwester
and
Grzegory, Izabella
2011.
Growth of Large GaN single crystals.
p.
AIWC1.
Ohta, Hiroaki
DenBaars, Steven
and
Nakamura, Shuji
2011.
Handbook of Luminescent Semiconductor Materials.
p.
69.
Polyakov, A. Y.
Jang, Lee-Woon
Smirnov, N. B.
Govorkov, A. V.
Kozhukhova, E. A.
Yugova, T. G.
Reznik, V. Y.
Pearton, S. J.
Baik, Kwang Hyeon
Hwang, Sung-Min
Jung, Sukkoo
and
Lee, In-Hwan
2011.
Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process.
Journal of Applied Physics,
Vol. 110,
Issue. 9,
Davis, R.F.
2011.
Comprehensive Semiconductor Science and Technology.
p.
339.
Zhang, Lei
Shao, Yongliang
Hao, Xiaopeng
Wu, Yongzhong
Qu, Shuang
Chen, Xiufang
and
Xu, Xiangang
2011.
Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth.
Journal of Crystal Growth,
Vol. 334,
Issue. 1,
p.
62.
Loghmany, Alireza
and
Valizadeh, Pouya
2011.
Analytical modelling of drain-current characteristics of AlGaN/GaN HFETs with full incorporation of steady-state velocity overshoot.
Journal of Physics D: Applied Physics,
Vol. 44,
Issue. 12,
p.
125102.
Hu, Yan-Ling
Kraemer, Stefan
Fini, Paul T.
and
Speck, James S.
2011.
Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth.
Journal of Crystal Growth,
Vol. 331,
Issue. 1,
p.
49.
Wang, Buguo
Bliss, David
Suscavage, Michael
Swider, Stacy
Lancto, Robert
Lynch, Candace
Weyburne, David
Li, Ti
and
Ponce, Fernando A.
2011.
Ammonothermal growth of high-quality GaN crystals on HVPE template seeds.
Journal of Crystal Growth,
Vol. 318,
Issue. 1,
p.
1030.
Wunderer, T.
Feneberg, M.
Lipski, F.
Wang, J.
Leute, R. A. R.
Schwaiger, S.
Thonke, K.
Chuvilin, A.
Kaiser, U.
Metzner, S.
Bertram, F.
Christen, J.
Beirne, G. J.
Jetter, M.
Michler, P.
Schade, L.
Vierheilig, C.
Schwarz, U. T.
Dräger, A. D.
Hangleiter, A.
and
Scholz, F.
2011.
Three‐dimensional GaN for semipolar light emitters.
physica status solidi (b),
Vol. 248,
Issue. 3,
p.
549.
Bae, S.Y.
Lee, D.S.
Kong, B.H.
Cho, H.K.
Kaeding, J.F.
Nakamura, S.
DenBaars, S.P.
and
Speck, J.S.
2011.
Electroluminescence enhancement of (112¯2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates.
Current Applied Physics,
Vol. 11,
Issue. 3,
p.
954.
Leung, Benjamin
Sun, Qian
Yerino, Christopher D
Han, Jung
and
Coltrin, Michael E
2012.
Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy.
Semiconductor Science and Technology,
Vol. 27,
Issue. 2,
p.
024005.
Kelchner, K.M.
DenBaars, S.P.
and
Speck, J.S.
2012.
Advances in Semiconductor Lasers.
Vol. 86,
Issue. ,
p.
149.