Defect Transition Can Enhance Band-Edge Emission in Semiconductor Nanocomposites

Zhaoyong Sun

doi:10.1557/mrs2008.94

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Defect Transition Can Enhance Band-Edge Emission in Semiconductor Nanocomposites

Published online by Cambridge University Press: 31 January 2011

Zhaoyong Sun

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Type: Research/Researchers
Information: MRS Bulletin , Volume 33 , Issue 5: Molecular Biomimetics , May 2008 , pp. 492

DOI: https://doi.org/10.1557/mrs2008.94 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2008

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Defect Transition Can Enhance Band-Edge Emission in Semiconductor Nanocomposites

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