Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-30T18:07:32.876Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy

Published online by Cambridge University Press:  19 April 2013

J.E. Greene
Get access

Extract

We are living in the golden era of materials science. To cite but one example, consider the field of thin-film physics. Crystal growers have been moving inexorably closer to being able to deposit layers and hence to control film properties on an atom-by-atom basis. We are nearing an era in which it will be possible to deposit “designer” materials with a specified set of properties.

Type
Research Article
Information
MRS Bulletin , Volume 26 , Issue 10 , October 2001 , pp. 777 - 789
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kim, H. Glass, G. Soares, J.A.N.T. Desjardins, P. and Greene, J.E. J. Appl. Phys. 88 (2000) p. 7067.CrossRefGoogle Scholar
2. Vick, G.L. and Whittle, K.M. J. Electrochem. Soc. 116 (1969) p.1142.CrossRefGoogle Scholar
3. Kim, H. Taylor, N. Bramblett, T.R. and Greene, J.E. J. Appl. Phys. 84 (1998) p. 6372 and references therein.CrossRefGoogle Scholar
4. Lu, Q. Bramblett, T.R. Lee, N.E. Hasan, M.A. Karasawa, T. and Greene, J.E. J. Appl. Phys. 77 (1995) p.3067.CrossRefGoogle Scholar
5. Kim, H. Desjardins, P. Abelson, J.R. and Greene, J.E. Phys. Rev. B 58 (1998) p.4803.CrossRefGoogle Scholar
6. Kim, H. Taylor, N. Abelson, J.R. and Greene, J.E. J.Appl. Phys. 82 (1997) p.6062.CrossRefGoogle Scholar
7. Bramblett, T.R. Lu, Q. Karasawa, T. Hasan, M.A. Jo, S.K. and Greene, J.E. J.Appl. Phys. 76 (1994) p.1884.CrossRefGoogle Scholar
8. Lubben, D. Tsu, R. Bramblett, T.R. and Greene, J.E. J.Vac. Sci. Technol. A 9 (1991) p.3003.CrossRefGoogle Scholar
9. Boland, J.J. J. Vac. Sci. Technol., A 10 (1992) p.2458.CrossRefGoogle Scholar
10. Engstrom, J.R. Xia, L.Q. Furjanic, M.J. and Hansen, D.A. Appl. Phys. Lett. 63 (1993) p.1821.CrossRefGoogle Scholar
11. Glass, G. Kim, H. Desjardins, P. Taylor, N. Spila, T. Lu, Q. and Greene, J.E. Phys. Rev. B 61 (2000) p.7628.CrossRefGoogle Scholar
12. Kim, H. Glass, G. Spila, T. Taylor, N. Park, S.Y. Abelson, J.R. and Greene, J.E. J.Appl. Phys. 82 (1997) p.2288.CrossRefGoogle Scholar
13. Mott, N.F. Philos. Mag. 26 (1972) p.1015; Phys. Rev. B 44 (1991) p.265; N.F. Mott and M. Kaveh J.Phys. C 14 (1981) p.L177.CrossRefGoogle Scholar
14. Sze, S.M. Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981).Google Scholar
15. Bennett, H.S. J.Appl. Phys. 59 (1986) p.2837.CrossRefGoogle Scholar
16. Lee, D.S. and Fossum, J.G. IEEE Trans. Electron Devices ED 30 (1983) p.626.Google Scholar
17. Klauder, J.R. Ann. Phys. 14 (1961) p.43.CrossRefGoogle Scholar
18. Mahan, G.D. J.Appl. Phys. 51 (1980) p.2634.CrossRefGoogle Scholar
19. Fewster, P. J.Appl. Crystallogr. 22 (1989) p.64.CrossRefGoogle Scholar
20. Fewster, P. Semicond. Sci. Technol. 8 (1993) p.1915.CrossRefGoogle Scholar
21. Lide, D.R. ed., Handbook of Chemistry and Physics, 77th ed. (CRC Press, Boca Raton, FL, 1996).Google Scholar
22. Vailionis, A. Glass, G. Desjardins, P. Cahill, D.G. and Greene, J.E. Phys Rev. Lett. 82 (1999) p.4464.CrossRefGoogle Scholar
23. Zhu, J. de la Rubia, T.D., Yang, L.H. Mailhiot, C. and Gilmer, G.H. Phys. Rev. B 54 (1996) p.4741; Appl. Phys. Lett. 74 (1999) p.3657.CrossRefGoogle Scholar
24. Wagner, S. J. Electrochem. Soc. 119 (1972) p.1570.CrossRefGoogle Scholar
25. Slack, G.A. and Hussain, M.A. J.Appl. Phys. 70 (1991) p.2694.CrossRefGoogle Scholar
26. Caughy, D. and Thomas, R. in Proc. IEEE 55 (1967) p. 2192; W.R. Thurber R.L. Mattis Y.M. Liu and J.J. Filliben J. Electrochem. Soc. 127 (1980) p.2291.CrossRefGoogle Scholar
27. Headrick, R.L. Weir, B.E. Levi, A.F. Eaglesham, D.J. and Feldman, L.C. Appl. Phys. Lett. 57 (1990) p.2779.CrossRefGoogle Scholar
28. Wang, Y. and Hamers, R.J. Appl. Phys. Lett. 66 (1995) p.2057; J. Vac. Sci. Technol., A 13 (1995) p.1431.CrossRefGoogle Scholar
29. Wang, Y. Hamers, R.J. and Kaxiras, E. Phys. Rev. Lett. 74 (1995) p.403.CrossRefGoogle Scholar
30. Redhead, P.A. Vacuum 12 (1962) p.203; F.M. Lord and J.S. Kittelberger Surf. Sci. 43 (1974) p.173.CrossRefGoogle Scholar
31. Kim, H. Glass, G. Park, S.Y. Spila, T. Taylor, N. Abelson, J.R. and Greene, J.E. Appl. Phys. Lett. 69 (1996) p.3869.CrossRefGoogle Scholar
32. Höfer, U., Li, L. and Heinz, T.F. Phys. Rev. B 45 (1992) p.9485.CrossRefGoogle Scholar
33. Barnett, S.A. and Greene, J.E. Surf. Sci. 151 (1985) p.67.CrossRefGoogle Scholar
34. Meyerson, B.S. Uram, K.J. and LeGoues, F.K. Appl. Phys. Lett. 53 (1988) p.2555.CrossRefGoogle Scholar
35. Robbins, D.J. Glasper, J.L. Cullins, A.G. and Wang, W.Y. J.Appl. Phys. 69 (1991) p.3729.CrossRefGoogle Scholar
36. Jang, S.M. and Reif, R. Appl. Phys. Lett. 59 (1991) p.3162.CrossRefGoogle Scholar
37. Bramblett, T.R. Lu, Q. Lee, N.E. Taylor, N. Hasan, M.A. and Greene, J.E. J. Appl. Phys. 77 (1995) p.1504.CrossRefGoogle Scholar
38. Tersoff, J., Phys. Rev. B 45 (1992) p.5833.Google Scholar
39. Kim, H. and Greene, J.E. J. Vac. Sci. Technol., A 17 (1999) p.354.CrossRefGoogle Scholar
40. D'Elelyn, M.P., Cohen, S.M. Rouchouze, E. and Yang, Y.L. J. Chem. Phys. 98 (1993) p. 3560.Google Scholar
41. Van de Walle, C.G. and Martin, R.M. Phys. Rev. B 34 (1986) p.5621.CrossRefGoogle Scholar
42. Fukatsu, S. Fujita, K. Yaguchi, H. Shiraki, Y. and Ito, R. Surf. Sci. 267 (1992) p.79.CrossRefGoogle Scholar
43. Kileres, P.C. and Tersoff, J., Phys. Rev. Lett. 63 (1989) p.1164.CrossRefGoogle Scholar
44. Jesson, D.E. Pennycook, S.J. and Baribeau, J.H. Phys. Rev. Lett. 66 (1991) p.750.CrossRefGoogle Scholar
45. Kim, H. Glass, G. Desjardins, P. and Greene, J.E. J. Appl. Phys. 89 (2001) p.194.CrossRefGoogle Scholar