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Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

Published online by Cambridge University Press:  31 January 2011

Robert M. Wallace ,
Paul C. McIntyre ,
Jiyoung Kim  and
Yoshio Nishi
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Abstract

The prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

Type
Research Article
Information
MRS Bulletin , Volume 34 , Issue 7: Ultimate Scaling of CMOS Logic Devices with Ge and III—V Materials , July 2009 , pp. 493 - 503
Copyright
Copyright © Materials Research Society 2009

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