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Alternative Gate Dielectrics for Microelectronics

Published online by Cambridge University Press:  31 January 2011

Robert M. Wallace  and
Glen Wilk
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Abstract

This brief article sets the context for the March 2002 issue of MRS Bulletin focusing on Alternative Gate Dielectrics for Microelectronics. Contributors are several experts from industry and academia engaged in the search for manufacturable solutions for a suitable alternative gate dielectric to SiO2 using high-dielectric-constant (high-ĸ) materials. Issues discussed in the articles include thermodynamics criteria for materials selection, materials interactions in the construction of the transistor gate stack, characterization of alternative materials, determination of suitable band offsets for candidate dielectrics, and integration of these alternative gate dielectrics in a manufacturable environment.

Keywords

high-dielectric-constant materialshigh-ĸ dielectricsintegrationmaterials characterizationprocess compatibilitythermal stability.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 3: Alternative Gate Dielectrics for Microelectronics , March 2002 , pp. 186 - 191
Copyright
Copyright © Materials Research Society 2002

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References

1.International Technology Roadmap for Semiconductors Home Page, http://public.itrs.net (accessed January 2002).Google Scholar
2.Wilk, G.D., Wallace, R.M., and Anthony, J.M., J. Appl. Phys. 89 (2001) p. 5243.CrossRefGoogle Scholar