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Advances in Silicon Carbide Electronics

Published online by Cambridge University Press:  31 January 2011

J. C. Zolper  and
M. Skowronski

Abstract

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After substantial investment in research and development over the last decade, silicon carbide materials and devices are coming of age. The concerted efforts that made this possible have resulted in breakthroughs in our understanding of materials issues such as compensation mechanisms in high-purity crystals, dislocation properties, and the formation of SiC/SiO2 interfaces, as well as device design and processing. The progress accomplished over the last eight years in SiC-based electronic materials is summarized in this issue of MRS Bulletin.

Keywords

silicon carbideelectronic materialshigh-frequency power electronicsreliability
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 273 - 278
Copyright
Copyright © Materials Research Society 2005

References

1.Balakrishna, V., Hopkins, R.H., Augustine, G., Donne, G., and Thomas, R.N., Inst. Phys. Conf. Ser. 160 (1997) p. 321; J. Giocondi, G.S. Rohreer, M. Skowronski, V. Balakrishna, G. Augustine, H.M. Hobgood, and R.H. Hopkins, J. Cryst. Growth 181 (1997) p. 351; M. Dudley, X.R. Huang, W. Huang, A. Powell, S. Wang, P. Neudeck, and M. Skowronski, Appl. Phys. Lett. 75 (1999) p. 784.Google Scholar
2.Pirouz, P., Philos. Mag. A 78 (1998) p. 727; T.A. Kuhr, E.K. Sanchez, M. Skowronski, W.M. Vetter, and M. Dudley, J. Appl. Phys. 89 (2001) p. 4625.CrossRefGoogle Scholar
3.Bergman, J.P., Lendenmann, H., Nilsson, P.A., Lindefelt, U., and Skytt, P., Mater. Sci. Forum 353–356 (2001) p. 299.CrossRefGoogle Scholar
4.Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamoto, A., Kondo, H., Onda, S., and Takatori, K., Nature 430 (2004) p. 1009.CrossRefGoogle Scholar
5.Hobgood, H.M., Glass, R.C., Augustine, G., Hopkins, R.H., Jenny, J.R., Skowronski, M., Mitchel, W.C., and Roth, M., Appl. Phys. Lett. 66 (1995) p. 1364.CrossRefGoogle Scholar
6.Noblanc, O., Arnodo, C., Dua, C., Chartier, E., and Brylinski, C., Mater. Sci. Forum 338–342 (2000) p. 1247.CrossRefGoogle Scholar
7.Jenny, J.R., Mueller, S.T.G., Powell, A., Tsvetkov, V.F., Hobgood, H.M., Glass, R.C., and Carter, C.H. Jr., J. Electron. Mater. 31 (2002) p. 366.CrossRefGoogle Scholar
8.Chung, G.Y., Tin, C.C., Williams, R.J., McDonald, K., Ventra, M. Di, Pantelides, S.T., Feldmann, L.C., and Weller, R.A., Appl. Phys. Lett. 76 (2000) p. 1713.CrossRefGoogle Scholar