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STEM-EELS imaging of complex oxides and interfaces

Published online by Cambridge University Press:  13 January 2012

Maria Varela ,
Jaume Gazquez  and
Stephen J. Pennycook
Maria Varela
Affiliation:
Oak Ridge National Laboratory; [email protected]
Jaume Gazquez
Affiliation:
Institute of Materials Science of Barcelona; [email protected]
Stephen J. Pennycook
Affiliation:
Oak Ridge National Laboratory; [email protected]
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Abstract

The success of the correction of spherical aberration in the electron microscope has revolutionized our view of oxides. This is a very important class of materials that is promising for future applications of some of the most intriguing phenomena in condensed matter physics: colossal magnetoresistance, colossal ionic conductivity, high Tc superconductivity, and ferroelectricity. Understanding the physics underlying such phenomena, especially in low dimensional systems (thin films, interfaces, nanowires, nanoparticles), relies on the availability of techniques capable of looking at these systems in real space and with atomic resolution and even beyond, with single atom sensitivity; in many cases, the system properties depend on minuscule amounts of point defects that alter the material’s properties dramatically. Atomic resolution spectroscopy in the aberration-corrected electron microscope is one of the most powerful techniques available to materials scientists today. This article will briefly review some state-of-the-art applications to oxide materials: from atomic resolution elemental mapping and single atom imaging to applications to real systems, including oxide interfaces and mapping of physical properties such as the spin state of magnetic atoms.

Keywords

Oxidethin filmscanning transmission electron microscopy (STEM)electron energy-loss spectroscopy (EELS)
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 1: Spectroscopic imaging in electron microscopy , January 2012 , pp. 29 - 35
Copyright
Copyright © Materials Research Society 2012

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