Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T02:58:47.375Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Carbide Power Field-Effect Transistors

Published online by Cambridge University Press:  31 January 2011

Jian H. Zhao
Get access

Abstract

Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

Keywords

field-effect transistorsmetal oxide semiconductor field-effect transistorsMOSFETspower switchingsilicon carbidevertical-junction field-effect transistorsVJFETs
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 293 - 298
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Zhao, J.H., “Field-controlled high-power semiconductor devices,” U.S. Patent No. 6,107,649 (August 22, 2000) and U.S. Patent No. 6,423,986 (July 23, 2002).Google Scholar
2.Friedrichs, P., Mitlehner, H., Kaltschmidt, R., Weinert, U., Bartsch, W., Hecht, C., Dohnke, K.O., Weis, B., and Stephani, D., Proc. ICSCRM (1999) p. 1243.Google Scholar
3.Zhao, J.H., Li, X., Tone, K., Alexandrov, P., Pan, M., and Weiner, M., Proc. ICSCRM (2001) p. 1223.Google Scholar
4.Friedrichs, P., Mitlehner, H., Schörner, R., Dohnke, K.-O., Elpelt, R., and Stephani, D., Proc. ICSCRM (2001) p. 1185.Google Scholar
5.Gupta, R.N., Chang, H.R., Hanna, E., and Bui, C., Proc. ICSCRM (2001) p. 1219.Google Scholar
6.Onose, H., Watanabe, A., Someya, T., and Kobayashi, Y., Proc. ICSCRM (2001) p. 1227.Google Scholar
7.Asano, K., Sugawara, Y., Ryu, S., Singh, R., Palmour, J., Hayashi, T., and Takayama, D., Proc. ISPSD (2001) p. 23.Google Scholar
8.Asano, K., Sugawara, Y., Hayashi, T., Ryu, S., Singh, R., Palmour, J., and Takayama, D., Proc. ISPSD (2002) p. 61.Google Scholar
9.Zhao, J.H., Alexandrov, P., Fursin, L., and Weiner, M., Electron. Lett. 39 (1) (2003) p. 151.CrossRefGoogle Scholar
10.Zhao, J.H., Tone, K., Alexandrov, P., Fursin, L., and Weiner, M., IEEE Electron Device Lett. 24 (2003) p. 81.CrossRefGoogle Scholar
11.Tone, K., Zhao, J.H., Fursin, L., Alexandrov, P., and Weiner, M., IEEE Electron Device Lett. 24 (2003) p. 463.CrossRefGoogle Scholar
12.Zhao, J.H., Fursin, L., Alexandrov, P., Li, X., and Weiner, M., Proc. ICSCRM (2003) p. 1161.Google Scholar
13.Li, X., Tone, K., Cao, L., Alexandrov, P., Fursin, L., and Zhao, J.H., Proc. ICSCRM (1999) p. 1375.Google Scholar
14.Li, Y., Alexandrov, P., Burke, T., and Zhao, J.H., unpublished manuscript.Google Scholar
15.Palmour, J.W., Edmond, J.A., Kong, H.S., and Carter, C.H., Jr., Proc. 28th Intersociety Energy Conversion Energy Conf. (1993) p. 1249.Google Scholar
16.Shenoy, J.N., Cooper, J.A. Jr., and Melloch, M.R., IEEE Electron Device Lett. 18 (1997) p. 93.CrossRefGoogle Scholar
17.Tan, J., Cooper, J.A. Jr., and Melloch, M.R., IEEE Electron Device Lett. 19 (1998) p. 487.CrossRefGoogle Scholar
18.Khan, I.A., Cooper, J.A. Jr., Capano, M.A., Isaacs-Smith, T., and Williams, J.R., Proc. ISPSD (2002) p. 157.Google Scholar
19.Ryu, S., Krishnaswami, S., O'Loughlin, M., Richmond, J., Agarwal, A., Palmour, J., and Hefner, A., IEEE Electron Device Lett. 25 (8) (2004) p. 556.CrossRefGoogle Scholar
20.Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamoto, A., Kondo, H., Onda, S., and Takatori, K., Nature 430 (2004) p. 1009.CrossRefGoogle Scholar
21.Silicon Carbide and Related Materials 2003, Proc. 10th ICSCRM, edited by R., Madar, J., Camassel, and E., Blanquet (Trans Tech, Zurich, 2004) p. 1261.Google Scholar
22.Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Adachi, K., Fukuda, K., and Arai, K., Proc. 9th ICSCRM (2001) p. 1069.Google Scholar
23.Lu, C., Cooper, J.A. Jr., Tsuji, T., Chung, G., Williams, J.R., McDonald, K., and Feldman, L.C., IEEE Trans. Electron Devices 50 (7) (2003) p. 1582.Google Scholar
24.Das, M.K., Proc. 10th ICSCRM (2003) p. 1275.Google Scholar
25.Zhao, J.H., Wu, J., and Wang, X., et al., unpublished manuscript.Google Scholar
26.Matin, M., Saha, A., and Cooper, J.A. Jr., IEEE Trans. Electronic Devices 51 (10) (2004) p. 1721.CrossRefGoogle Scholar
27. Revised figure based on http://www.ecn.purdue.edu/WBG/Data_Bank/Best_Performance.html (accessed February 2005).Google Scholar
28.Zhao, J.H., Alexandrov, P., Zhang, J., Li, X., IEEE Electron Device Lett. 25 (2004) p. 474.CrossRefGoogle Scholar