Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T10:05:09.505Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC DioMOS with precisely controlled epitaxial channel

Published online by Cambridge University Press:  08 May 2015

Makoto Kitabatake  and
Atsushi Ohoka
Makoto Kitabatake
Affiliation:
Panasonic Corporation, Japan; [email protected]
Atsushi Ohoka
Affiliation:
Panasonic Corporation, Japan; [email protected]
Get access

Abstract

Silicon carbide (SiC) is the next-generation power semiconductor material, enabling an energy-efficient future society by drastically reducing energy loss in existing power electronics systems. SiC metal oxide semiconductor field-effect transistors (MOSFETs) are promising low-loss power-electronics devices. We have developed precisely controlled doping techniques for ultrathin and highly doped SiC epitaxial films and applied this to form the channels of SiC-MOSFETs. This has resulted in the successful formation of diode-integrated MOSFETs (DioMOSs), a structure enabled using SiC semiconductor material. The MOSFET current together with the diode current of the DioMOS is designed to maintain low conduction loss and good temperature stability. The high threshold voltage of MOSFETs and the perfect unipolar conduction with fast switching contribute to safety and low-loss operation. DioMOS offers a single-chip solution for next-generation power electronics compared to the parallel connection using a diode and a transistor in a conventional semiconductor device. DioMOS achieves a small and light direct current converter with high voltage, current, efficiency, and power density applicable to electric and hybrid vehicles.

Keywords

SiCsemiconductingdevicesenvironment
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 425 - 430
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Jayant Baliga, B., Fundamentals of Power Semiconductor Devices (Springer, New York, 2008).CrossRefGoogle Scholar
Choyke, W.J., Matsunami, H., Pensl, G., Eds., Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology (Akademic Verlag, Berlin, 1997), vols. 1 and 2.Google Scholar
Matsunami, H., Kimoto, T., Mater. Sci. Eng. R20, 125 (1997).CrossRefGoogle Scholar
Kitabatake, M., Sako, H., Sasaki, M., Yamashita, T., Tamura, K., Yamada, K., Ishiyama, O., Senzaki, J., Matsuhata, H., Mater. Sci. Forum 778, 979 (2014).CrossRefGoogle Scholar
Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K., Jpn. J. Appl. Phys. 39, 6469 (2000).CrossRefGoogle Scholar
Kitabatake, M., Jpn. J. Appl. Phys. 35, 5261 (1996).Google Scholar
Takahashi, K., Uchida, M., Kitabatake, M., Mater. Sci. Forum 338, 357 (2000).CrossRefGoogle Scholar
Kitabatake, M., Mater. Sci. Forum 264, 327 (1998).CrossRefGoogle Scholar
Larkin, D.J., Neudeck, P.G., Powell, J.A., Matus, L.G., Appl. Phys. Lett. 65, 1659 (1994).CrossRefGoogle Scholar
Takahashi, K., Yokogawa, T., Uchida, M., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M., Mater. Sci. Forum 389, 247 (2002).CrossRefGoogle Scholar
Kitabatake, M., Mater. Sci. Forum 600, 913 (2009).Google Scholar
Soloviev, S.I., Gao, Y., Khlebnikov, Y., Khlebnikov, I.I., Sudarshan, T.S., Mater. Sci. Forum 389, 557 (2002).CrossRefGoogle Scholar
Chang, K.C., Porter, L.M., Bentley, J., Lu, C.Y., Cooper, J. Jr., J. Appl. Phys. 95, 8252 (2004).CrossRefGoogle Scholar
Skowronski, M., Ha, S., J. Appl. Phys. 99 , 011101 (2006).CrossRefGoogle Scholar
Uchida, M., Horikawa, N., Tanaka, K., Takahashi, K., Kiyosawa, T., Hayashi, M., Niwayama, M., Kusumoto, O., Adachi, K., Kudou, C., Kitabatake, M., presented at the IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2011, p. 602.Google Scholar
Ohoka, A., Horikawa, N., Kiyosawa, T., Sorada, H., Uchida, M., Kanzawa, Y., Sawada, K., Ueda, T., Fujii, E., Mater. Sci. Forum 778, 911 (2014).CrossRefGoogle Scholar
Kreutzer, O., Maerz, M., Nakata, N., Proc. Eur. Conf. Silicon Carbide Relat. Mater. (ECSCRM) 2014, TU2-OR-02 (forthcoming).Google Scholar