Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-27T22:24:14.778Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC Bipolar Power Devices

Published online by Cambridge University Press:  31 January 2011

T. Paul Chow
Get access

Abstract

The successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

Keywords

bipolar power devicespower rectifierspower thyristorspower transistorssilicon carbide.
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 299 - 304
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Ghandhi, S.K., Semiconductor Power Devices (John Wiley & Sons, New York 1977, republished 1998).Google Scholar
2.Baliga, B.J., Physics of Semiconductor Power Devices (John Wiley & Sons, New York, 1996).Google Scholar
3.Bhalla, A. and Chow, T.P., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1994) p. 287.Google Scholar
4.Chow, T.P. and Tyagi, R., IEEE Trans. Electron Devices 41 (1994) p. 1481.CrossRefGoogle Scholar
5. Data sheets available on-line at http://www.infineon.com (accessed March 2005).Google Scholar
6. Data sheets available on-line at http://www.cree.com (accessed March 2005).Google Scholar
7.Lendenmann, H., Mukhitdinov, A., Dahlquist, F., Bleichner, H., Irvin, M., Soderholm, R., and Skytt, P., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001) p. 31.Google Scholar
8.Sugawara, Y., Takayama, D., Asano, K., Singh, R., Palmour, J., and Hayashi, T., Proc. Int. Symp. Power Devices and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001) p. 27.Google Scholar
9.Fedison, J.B., Ramungul, N., Chow, T.P., Ghezzo, M., and Kretchmer, J.W., IEEE Electron Dev. Lett. 22 (2001) p. 130.CrossRefGoogle Scholar
10.Lendenmann, H., Dahlquist, F., Johansson, N., Soderholm, R., Nilsson, P.A., Bergman, J.P., and Skytt, P., Mater. Sci. Forum 353–356 (2000) p. 727.Google Scholar
11.Stahlbush, R.F., Fedison, J.B., Arthur, S.D., Rowland, L.B., Kretchmer, J.W., and Wang, S., Mater. Sci. Forum 389–393 (2002) p. 427.CrossRefGoogle Scholar
12.Lendenmann, H., Bergman, J.P., Dahlquist, F., and Hallin, C., Mater. Sci. Forum 433–436 (2003) p. 901.CrossRefGoogle Scholar
13.Das, M.K., Sumakeris, J.J., Hull, B.A., Richmond, J., Krishnaswami, S., and Powell, A.R., Mater. Sci. Forum 483–485 (2004) p. 965.Google Scholar
14.Asano, K., Hayashi, T., Saito, R., and Suguwara, Y., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 97.Google Scholar
15.Wu, J., Fursin, L., Li, Y., Alexandrov, P., and Zhao, J.H., Mater. Sci. Forum 457–460 (2004) p. 1109.CrossRefGoogle Scholar
16.Losee, P. and Chow, T.P., unpublished manuscript.Google Scholar
17.Ryu, S.-H., Agarwal, A.K., Singh, R., and Palmour, J.W., IEEE Electron Dev. Lett. 22 (2001) p. 124.Google Scholar
18.Ryu, S.-H., Agarwal, A.K., Palmour, J.W., and Levinshtein, M.E., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001) p. 37.Google Scholar
19.Huang, C.-F. and Cooper, J.A. Jr., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2002) p. 57.Google Scholar
20.Agarwal, A.K., Ryu, S.-H., Richmond, J., Capell, C., Palmour, J.W., Tang, Y., Balachandran, S., and Chow, T.P., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2003) p. 135.Google Scholar
21.Agarwal, A.K., Ryu, S.-H., Richmond, J., Capell, C., Palmour, J.W., Balachandran, S., Chow, T.P., Scozzie, C., and Jones, K.A., Proc. International Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2004) p. 361.Google Scholar
22.Krishnaswami, S., Agarwal, A.K., Capell, C., Richmond, J., Ryu, S.-H., Palmour, J.W., Balachandran, S., Chow, T.P., Bayne, S., Geil, B., Jones, K.A., and Scozzie, C., Mater. Sci. Forum 483–485 (2004) p. 901.Google Scholar
23.Zhang, J., Alexandrov, P., and Zhao, J.H., Mater. Sci. Forum 457–460 (2004) p. 1149.CrossRefGoogle Scholar
24.Tang, Y., Fedison, J.B., and Chow, T.P., Mater. Sci. Forum 389–393 (2002) p. 1329.CrossRefGoogle Scholar
25.Tang, Y. and Chow, T.P., Mater. Sci. Forum 433–436 (2003) p. 789.CrossRefGoogle Scholar
26.Tang, Y. and Chow, T.P., Proc. IEEE Int. Symp. Power Semicond. Devices and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2003) p. 383.Google Scholar
27.Baliga, B.J., Modern Power Devices (Wiley, New York, 1987).Google Scholar
28.Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., and Weiner, M., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (2003) p. 50.Google Scholar
29.Sugawara, Y., Takayama, D., Asano, K., Ryu, S., Miyauchi, A., Ogata, S., and Hayashi, T., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2003) p. 127.Google Scholar
30.Sugawara, Y., Asano, K., Singh, R., Palmour, J., and Takayama, D., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 105.Google Scholar
31.Sugawara, Y., Asano, K., Takayama, D., Ryu, S., Singh, R., Palmour, J., and Hayashi, T., Mater. Sci. Forum 389–393 (2002) p. 1199.CrossRefGoogle Scholar
32.Takayama, D., Sugawara, Y., Hayashi, T., Singh, R., Palmour, J., Ryu, S., and Asano, K., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001) p. 41.Google Scholar
33.Mitlehner, H., Friedrichs, P., Elpelt, R., Dohnke, K.O., Schorner, R., and Stephani, D., Mater. Sci. Forum 457–460 (2004) p. 1245.CrossRefGoogle Scholar
34.Agarwal, A.K., Casady, J.B., Rowland, L.B., Seshadri, S., Siergiej, R.R., Valek, W.F., and Brandt, C.D., IEEE Electron Dev. Lett. 18 (1997) p. 518.CrossRefGoogle Scholar
35.Fedison, J., Chow, T.P., Ghezzo, M., Kretchmer, J.W., and Nielsen, M.C., Mater. Sci. Forum 338–342 (2000) p. 1391.CrossRefGoogle Scholar
36.Van Campen, S., Ezis, A., Zingaro, J., Storaska, G., Clarke, R.C., Temple, V., Thompson, M., and Hansen, T., in Silicon Carbide 2002—Materials, Processing, and Devices, edited by S.E., Saddow, D.J., Larkin, N.S., Saks, A., Schöner (Mater. Res. Soc. Symp. Proc. 742, Warrendale, PA, 2002) p. 381.Google Scholar
37.Sugawara, Y., Takayama, D., Asano, K., Agarwal, A., Ryu, S., Palmour, J., and Ogata, S., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2004) p. 365.Google Scholar
38.Fedison, J., Chow, T.P., Agarwal, A.K., and Palmour, J.W., Proc. 2000 Device Res. Conf. (The Minerals, Metals & Materials Society, Warrendale, PA, 2000) p. 135.Google Scholar
39.Fedison, J. and Chow, T.P., Proc. IEEE Int. Symp. Power Semicond. Dev. and ICs (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001) p. 175.Google Scholar
40.Neudeck, P., Huang, W., and Dudley, M., Solid-State Electronics 42 (1999) p. 2157.CrossRefGoogle Scholar
41.Persson, P.O.A., Jacobson, H., Molina-Aldareguia, J.M., Bergman, J.P., Tuomi, T., Clegg, W.J., Janzen, E., and Hultman, L., Mater. Sci. Forum 389–393 (2002) p. 423.CrossRefGoogle Scholar