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Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

Published online by Cambridge University Press:  31 January 2011

F.H. Baumann ,
D.L. Chopp ,
T. Díaz de la Rubia ,
G.H. Gilmer ,
J.E. Greene ,
H. Huang ,
S. Kodambaka ,
P. O'Sullivan  and
I. Petrov
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Extract

Metallization is the back end of the integrated-circuit (IC) fabrication process where the transistor interconnections are formed. Figure 1 shows the metallized part of a static random-access memory chip. Metal lines for electrical connections (Al and Cu) in Si devices are deposited as blanket films and then etched or polished away to define the conducting lines.

Type
Research Article
Information
MRS Bulletin , Volume 26 , Issue 3: Materials Research by Means of Multiscale Computer Simulation , March 2001 , pp. 182 - 189
Copyright
Copyright © Materials Research Society 2001

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