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Integrated circuits in silicon carbide for high-temperature applications

Published online by Cambridge University Press:  08 May 2015

Carl-Mikael Zetterling
Carl-Mikael Zetterling*
Affiliation:
KTH Royal Institute of Technology, Sweden; [email protected]
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Abstract

High-temperature electronic applications are presently limited to a maximum operational temperature of 225°C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600°C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.

Keywords

semiconductingdevicesmicroelectronicselectrical properties
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 431 - 438
Copyright
Copyright © Materials Research Society 2015 

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