Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-24T08:45:45.706Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

Published online by Cambridge University Press:  29 November 2013

A.I. Kingon ,
S.K. Streiffer ,
C. Basceri  and
S.R. Summerfelt
Get access

Extract

An important application of ferroelectric films is their incorporation into dynamic random-access memories (DRAMs) as the storage node capacitor dielectric. Dynamic random-access memories represent a large market that is experiencing strong growth, but they are particularly significant as the technology leader for semiconductor devices. As products move to higher and higher integration density, new developments are first introduced in DRAMs. The steady trend toward higher density has placed severe demands on the device designs, particularly with respect to “squeezing” the capacitor into the available space.

Type
Electroceramic Thin Films Part II: Device Applications
Information
MRS Bulletin , Volume 21 , Issue 7 , July 1996 , pp. 46 - 52
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Tasch, A.F. and Parker, L.H., Proc. of the IEEE 77 (1989) p. 374.CrossRefGoogle Scholar
2.Gnade, B., Summerfelt, S.R., and Crenshaw, D., in Science and Technology of Electroceramic Thin Films: NATO ASI Senes Vol. 284, edited by Auciello, O. and Waser, R. (London: Kluwer Academic Publishers, 1995) p. 373.CrossRefGoogle Scholar
3.Fazan, P.C., Integrated Ferroelectrics 4 (1994) p. 247.CrossRefGoogle Scholar
4.Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Group III: Crystal and Solid State Physics, vol. 16(a), edited by Hellwege, K-H. (Berlin: Springer Verlag, 1981) p. 416.Google Scholar
5.Yuuki, A., Yamamuka, M., Makita, T., Horikawa, T., Shibano, T., Hirano, N., Maeda, H., Mikami, N., Ono, K., Ogata, H., and Abe, H., IEEE IEDM-95 (1995) p. 115.Google Scholar
6.Yamamichi, S., Lesaicherre, P-Y., Yamaguchi, H., Takemura, K., Sone, S., Yabuta, H., Sato, K., Tamura, T., Nakajima, K., Ohnishi, S., Tokashiki, K., Hayashi, Y., Kato, Y., Miyasaka, Y., Yoshida, M., and Ono, H., IEEE IEDM-95 (1995) p. 119.Google Scholar
7.Jonscher, A.K., Dielectric Relaxation in Solids (London: Chelsea Dielectrics Press, 1983).Google Scholar
8.Curie, J., Ann. Chim. Phys. 18 (1889) p. 203; E. von Schweidler, Ann. Phys. 24 (1907) p. 711.Google Scholar
9.Streiffer, S.K., Basceri, C., Kingon, A.I., Lipa, S., Bilodeau, S., Carl, R., and van Buskirk, P.C., MRS Symposium Proc., in press (1996); T. Horikawa, T. Makita, T. Kuroiwa, and N. Mikami, Jpn. J. Appl. Phys. 34 (1995) p. 5478.Google Scholar
10.Miyasaka, Y., Extended Abstracts of the Seventh US-Japan Seminar on Dielectric and Piezoelectric Ceramics (Tsukuba, Nov. 14–17, 1995), edited by Yamamoto, Takashi, 8–13 (1995), and references therein.Google Scholar
11.Hwang, C.S., Park, S.O., Cho, H-J., Kang, C.S., Kang, H-K., Lee, S.I., and Lee, M.Y., Appl. Phys. Lett. 67 (1995) p. 2819.CrossRefGoogle Scholar
12.van Buskirk, P.C., Roeder, J.F., and Bilodeau, S., ISIF 1995 IF 10 (1995) p. 9; T. Kawahara, M. Yamamuka, T. Makita, J. Naka, A. Yuuki, N. Mikami, and K. Ono, Jpn. J. Appl. Phys. 33 (1994) p. 5129.Google Scholar
13.Lesaicherre, P-Y., Yamamichi, S., Takemura, K., Yamaguchi, H., Tokashiki, K., Miyasaka, Y., Yoshida, M., and Ono, H., Integrated Ferroelectrics 11 (1995) p. 81.CrossRefGoogle Scholar
14.Horikawa, T., Makita, T., Kuroiwa, T., and Mikami, N., Extended Abstracts of the Seventh US-Japan Seminar on Dielectric and Piezoelectric Ceramics (Tsukuba, Nov. 14–17, 1995), edited by Yamamoto, Takashi (1995) p. 24.Google Scholar
15. See, for example, Lines, M.E. and Glass, A.M., Principles and Applications of Ferroelectrics and Related Materials (Oxford: Clarendon Press, 1977) p. 71.Google Scholar
16.Kiyotoshi, M. and Eguchi, K., Appl. Phys. Lett. 67 (1995) p. 2468.CrossRefGoogle Scholar
17.Basceri, C., Streiffer, S.K., Kingon, A.I., Bilodeau, S., Carl, R., Van Buskirk, P.C., Summerfelt, S.R., McIntyre, P., and Waser, R., in Ferroelectric Thin Films V, edited by Desu, Seshu B., Ramesh, R., Tuttle, Bruce A., and Yoo, In K. (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, to be published).Google Scholar
18.Waser, R., Baiatu, T., and Härdtl, K-H., J. Am. Ceram. Soc. 73 (1990) p. 1645; R. Waser, T. Baiatu, and K-H. Hardtl, J. Am. Ceram. Soc. 73 (1990) p. 1654; R. Waser, T. Baiatu, and K-H. Hardtl, J. Am. Ceram. Soc. 73 (1990) p. 1663.CrossRefGoogle Scholar
19.Numata, K., Fukuda, Y., Aoki, K., and Nishimura, A., Jpn. J. Appl. Phys. 34 p. 5245.CrossRefGoogle Scholar
20.de Keijser, M., Dormans, G.J.M., and Veldhoven, P.J., in Ferroelectric Thin Films III, edited by Myers, E.R., Tuttle, B.A., Desu, S.B., and Larsen, P.K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, 1993) p. 223.Google Scholar
21.Kawahara, T., Yamamuka, M., Yuuki, A., and Ono, K., Jpn. J. Appl. Phys. 34 (1995) p. 5077.CrossRefGoogle Scholar
22. As reported in Reference 10.Google Scholar
23. Presented at the International Conference on Solid State Devices and Materials, Osaka, August 12–24, 1995.Google Scholar
24.Lesaicherre, P-Y., Yamaguchi, H., Miyasaka, Y., Watanabe, H., Ono, H., and Yoshida, M., Integrated Ferroelectrics 8 (1995) p. 201.CrossRefGoogle Scholar
25.Nishioka, Y., Shiozawa, K., Oishi, T., Kanamoto, K., Tokuda, Y., Sumitani, H., Aya, S., Yabe, H., Itoga, K., Hifumi, T., Marumoto, K., Kuroiwa, T., Kawahara, T., Oomori, T., Fujino, T., Yamamoto, S., Uzawa, S., Kimata, M., Nunoshita, N., and Abe, H., IEEE IEDM-95 (1995).Google Scholar