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Graphene materials and devices in terahertz science and technology

Published online by Cambridge University Press:  23 November 2012

Taiichi Otsuji ,
Stephane Albon Boubanga Tombet ,
Akira Satou ,
Hirokazu Fukidome ,
Maki Suemitsu ,
Eiichi Sano ,
Vyacheslav Popov ,
Maxim Ryzhii  and
Victor Ryzhii
Taiichi Otsuji
Affiliation:
Tohoku University and JST-CREST, Japan; [email protected]
Stephane Albon Boubanga Tombet
Affiliation:
Tohoku University, Japan; [email protected]
Akira Satou
Affiliation:
Tohoku University and JST-CREST, Japan; [email protected]
Hirokazu Fukidome
Affiliation:
Tohoku University and JST-CREST, Japan; [email protected]
Maki Suemitsu
Affiliation:
Tohoku University and JST-CREST, Japan; [email protected]
Eiichi Sano
Affiliation:
Hokkaido University and JST-CREST, Japan; [email protected]
Vyacheslav Popov
Affiliation:
Russian Academy of Science, Russia; [email protected]
Maxim Ryzhii
Affiliation:
University of Aizu and JST-CREST, Japan; [email protected]
Victor Ryzhii
Affiliation:
Tohoku University and JST-CREST, Japan; [email protected]
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Abstract

The gapless energy spectra and linear dispersion relations of electrons and holes in graphene lead to nontrivial features such as a high carrier mobility and a flat, broadband optical response. This article reviews recent advances in graphene-based materials and devices for terahertz science and technology. After an introduction to the fundamental basis of the optoelectronic properties of graphene, the synthesis and crystallographic characterization of graphene materials are described, with a particular focus on the authors’ original heteroepitaxial graphene-on-silicon technology. The nonequilibrium dynamics of carrier relaxation and recombination in optically or electrically pumped graphene is discussed to introduce the possibility of negative dynamic conductivity over a wide terahertz range. Recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described, followed by the unique terahertz dynamics of two-dimensional plasmons in graphene. Finally, the advantages of graphene materials and devices for terahertz applications are summarized.

Keywords

laser (199)optoelectronic (207)nanostructure (238)electron-phonon interactions (287)
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 12: Graphene Fundamentals and Functionalities , December 2012 , pp. 1235 - 1243
Copyright
Copyright © Materials Research Society 2012

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