Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-24T10:27:33.734Z Has data issue: false hasContentIssue false

Erasable Phase-Change Optical Materials

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

Almost all stones on a lane will become glassy if they are melted and quenched. They will become transparent and quite different in appearance from before vitrification. This visible change constitutes the recording of information. We might refer to the stone as “1 bit.” If the vitrified stone is subsequently kept at a high temperature under its melting point, it will lose its transparency and turn back to the appearance it had before melting and quenching. Thus the “1 bit” is erased. This is the simple mechanism of an erasable phase-change optical memory. In practical systems, a laser beam focused into a diffraction-limited spot is used for recording. This enables the spatial size of the “1 bit” to be very small (of submicron order) so that the recording density is very high.

Figure 1 shows a transmission-electron-microscope (TEM) photograph of an actual optical disk. The elliptical smooth areas are recording marks in the amorphous state that were formed by high-power and short-duration laser irradiation. The shortest mark length is about 0.5 μm. The area surrounding the amorphous marks is in the crystalline state and consists of small grains. The two states differ from each other in optical properties such as refractive indices and optical absorption coefficients. Accordingly when the bits are illuminated with low-intensity laser light, the reflected light from the amorphous and crystalline regions is different and may be detected as information signals.

The amorphous marks are erased by heating above the glass-transition temperature by laser irradiation, but with lower power than is used in the case of recording.

Type
Ultrahigh-Density Information-Storage Materials
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Feinleib, J., deNeufville, J., Moss, S.C., and Ovshinsky, S.R., Appl. Phys. Lett. 18 (1971) p. 254.CrossRefGoogle Scholar
2.Smith, A.W., Appl. Opt. 13 (1974) p. 795.CrossRefGoogle Scholar
3.Yamada, N., Takao, M., and Takenaga, M., in Proc. Soc. Photo-Opt. Instrum. Eng. 695 (1986) p. 105.Google Scholar
4.Chen, M., Rubin, K.A., and Barton, R.W., Appl. Phys. Lett. 49 (1986) p. 502.CrossRefGoogle Scholar
5.Yamada, N., Ohno, E., Akahira, N., Nishiuchi, K., Nagata, K., and Takao, M., Jpn. J. Appl. Phys. suppl. 26-4 (1987) p. 61.Google Scholar
6.Sakka, S. and Mackenzie, J.D., J. Non-Cryst. Solids 1 (1967) p. 107.CrossRefGoogle Scholar
7.Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., and Takao, M., J. Appl. Phys. 69 (1991) p. 2849.CrossRefGoogle Scholar
8.Abrikosov, N.Kh. and Danilova-Dobryakova, G.T., Izv. Akad. Auk. SSSR Neorg. Mater. 1 (1965) p. 204.Google Scholar
9.Ohta, T., Furukawa, S., Yoshioka, K., Uchida, M., Inoue, A., Akiyama, T., Nagata, K., and Nakamura, S., in Proc. Soc. Photo-Opt. Instrum. Eng. 1316 (1990) p. 367.Google Scholar
10.Imanaka, R., Saimi, T., Okazaki, Y., and Kawamura, I., in Proc. Int. Symp. on Optical Memory 1995, Technical Digest (1995) p. 41.Google Scholar
11.Ishida, T., Shoji, M., Miyabata, Y., Shibata, Y., Ohno, E., and Ohara, S., in Proc. Soc. Photo-Opt. Instrum. Eng. 2338 (1994) p. 121.Google Scholar