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Electrical Spin Injection and Transport in Semiconductor Spintronic Devices

Published online by Cambridge University Press:  31 January 2011

B.T. Jonker ,
S.C. Erwin ,
A. Petrou  and
A.G. Petukhov
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Abstract

Semiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.

Keywords

ferromagnetic materialssemiconductorsspin injectionspin-polarized materialsspintronics
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 10: New Materials for Spintronics , October 2003 , pp. 740 - 748
Copyright
Copyright © Materials Research Society 2003

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References

1.Wong, H.S.P., Frank, D.J., Solomon, P.M., Wann, C.H.J., and Welser, J.J., Proc. IEEE, Vol. 87 (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1999) p. 537.Google Scholar
2.Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., von Molnár, S., Roukes, M.L., Chtchelkanova, A.Y., and Treger, D.M., Science 294 (2001) p. 1488.CrossRefGoogle Scholar
3.Jonker, B.T., Proc. IEEE, Vol. 91 (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2003) p. 727.Google Scholar
4.DiVincenzo, D.P., Science 269 (1995) p. 255.CrossRefGoogle Scholar
5.Datta, S. and Das, B., Appl. Phys. Lett. 56 (1990) p. 665.CrossRefGoogle Scholar
6.Bruno, P. and Wunderlich, J., J. Appl. Phys. 84 (1998) p. 978.CrossRefGoogle Scholar
7.Ohno, H., Akiba, N., Matsukura, F., Shen, A., Ohtani, K., and Ohno, Y., Appl. Phys. Lett. 73 (1998) p. 363.CrossRefGoogle Scholar
8.de Andrada e Silva, E.A. and La Rocca, G.C., Phys. Rev. B 59 (1999) p. R15583.CrossRefGoogle Scholar
9.Hayashi, T., Tanaka, M., and Asamitsu, A., J. Appl. Phys. 87 (2000) p. 4673.CrossRefGoogle Scholar
10.Gruber, Th., Keim, M., Fiederling, R., Reuscher, G., Ossau, W., Schmidt, G., Molenkamp, L., and Waag, A., Appl. Phys. Lett. 78 (2001) p. 1101.CrossRefGoogle Scholar
11.Koga, T., Nitta, J., Takayanagi, H., and Datta, S., Phys. Rev. Lett. 88 126601 (2002).CrossRefGoogle Scholar
12.Morpurgo, A.F., Heida, J.P., Klapwijk, T.M., van Wees, B.J., and Borghs, G., Phys. Rev. Lett. 80 (1998) p. 1050.CrossRefGoogle Scholar
13.Nitta, J., Meijer, F., Narita, Y., and Takayanagi, H., Physica E 6 (2000) p. 318.CrossRefGoogle Scholar
14.Jonker, B.T., U.S. Patent No. 5,874,749 (February 23, 1999).Google Scholar
15.Petukhov, A.G., Chantis, A.N., and Demchenko, D.O., Phys. Rev. Lett. 89 107205 (2002).CrossRefGoogle Scholar
16.Hägele, D., Oestreich, M., Rühle, W.W., Nestle, N., and Eberl, K., Appl. Phys. Lett. 73 (1998) p. 1580.CrossRefGoogle Scholar
17.Kikkawa, J.M. and Awschalom, D.D., Nature 397 (1999) p. 139.CrossRefGoogle Scholar
18.Kikkawa, J.M. and Awschalom, D.D., Phys. Rev. Lett. 80 (1998) p. 4313.CrossRefGoogle Scholar
19.Dzhioev, R.I., Kavokin, K.V., Korenev, V.L., Lazarev, M.V., Meltser, B.Ya., Stepanova, M.N., Zakharchenya, B.P., Gammon, D., and Katzer, D.S., Phys. Rev. B 66 245204 (2002).Google Scholar
20.Jia, Y.Q., Shi, R.C., and Chou, S.Y., IEEE Trans. Magn. 32 (1996) p. 4707.CrossRefGoogle Scholar
21.Hirohata, A., Xu, Y.B., Guertler, C.M., Bland, J.A.C., and Holmes, S.N., Phys. Rev. B 63 104425 (2001).CrossRefGoogle Scholar
22.Hirsch, J.E., Phys. Rev. Lett. 83 (1999) p. 1834.CrossRefGoogle Scholar
23.Zhang, S., Phys. Rev. Lett. 85 (2000) p. 393.CrossRefGoogle Scholar
24.Meier, F. and Zakharchenya, B.P., Optical Orientation (North-Holland, Amsterdam, 1984).Google Scholar
25.Weisbuch, C. and Vinter, B., Quantum Semiconductor Structures, Chapter 11 (Academic Press, New York, 1991).CrossRefGoogle Scholar
26.Furdyna, J.K. and Kossut, J., eds., Diluted Magnetic Semiconductors, Semiconductors, and Semimetals, Vol. 25, Willardson, R.K. and Beer, A.C., series editors (Academic Press, New York, 1988).Google Scholar
27.Jain, M., Diluted Magnetic Semiconductors (World Scientific, Singapore, 1991).CrossRefGoogle Scholar
28.Fiederling, R., Keim, M., Reuscher, G., Ossau, W., Schmidt, G., Waag, A., and Molenkamp, L.W., Nature 402 (1999) p. 787.CrossRefGoogle Scholar
29.Jonker, B.T., Park, Y.D., Bennett, B.R., Cheong, H.D., Kioseoglou, G., and Petrou, A., Phys. Rev. B 62 (2000) p. 8180.CrossRefGoogle Scholar
30.Jonker, B.T., Hanbicki, A.T., Park, Y.D., Itskos, G., Furis, M., Kioseoglou, G., Petrou, A., and Wei, X., Appl. Phys. Lett. 79 (2001) p. 3098. See also Nature Physics Portal: “Spintronics Quantified,” http://www.nature.com/physics/highlights/6860-3.html (accessed July 2003).CrossRefGoogle Scholar
31.Park, Y.D., Jonker, B.T., Bennett, B.R., Itskos, G., Furis, M., Kioseoglou, G., and Petrou, A., Appl. Phys. Lett. 77 (2000) p. 3989.CrossRefGoogle Scholar
32.Stroud, R.M., Hanbicki, A.T., Park, Y.D., Kioseoglou, G., Pethukov, A.G., Jonker, B.T., Itskos, G., and Petrou, A., Phys. Rev. Lett. 89 166602 (2002).CrossRefGoogle Scholar
33.Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287 (2000) p. 1019.CrossRefGoogle Scholar
34.Dietl, T., Ohno, H., and Matsukura, F., Phys. Rev. B 63 195205 (2001).CrossRefGoogle Scholar
35.Kohda, M., Ohno, Y., Takamura, K., Matsukura, F., and Ohno, H., Jpn. J. Appl. Phys., Part 2: Lett. 40 (2001) p. L1274.CrossRefGoogle Scholar
36.Johnston-Halperin, E., Lofgreen, D., Kawakami, R.K., Young, D.K., Coldren, L., Gossard, A.C., and Awschalom, D.D., Phys. Rev. B 65 041306(R) (2002).CrossRefGoogle Scholar
37.Tanaka, M. and Higo, Y., Phys. Rev. Lett. 87 026602 (2001).CrossRefGoogle Scholar
38.Chun, S.H., Potashnik, H.J., Ku, K.C., Schiffer, P., and Samarth, N., Phys. Rev. B 66 100408(R) (2002).CrossRefGoogle Scholar
39.Park, Y.D., Hanbicki, A.T., Mattson, J.E., and Jonker, B.T., Appl. Phys. Lett. 81 (2002) p. 1471.CrossRefGoogle Scholar
40.Hammar, P.R., Bennett, B.R., Yang, M.J., and Johnson, M., Phys. Rev. Lett. 83 (1999) p. 203.CrossRefGoogle Scholar
41.Hu, C.-M., Nitta, J., Jensen, A., Hansen, J.B., and Takanayagi, H., Phys. Rev. B 63 125333 (2001).CrossRefGoogle Scholar
42.Gardelis, S., Smith, C.G., Barnes, C.H.W., Linfield, E.H., and Ritchie, D.A., Phys. Rev. B 60 (1999) p. 7764.CrossRefGoogle Scholar
43.Monzon, F.G., Tang, H.X., and Roukes, M.L., Phys. Rev. Lett. 84 (2000) p. 5022.CrossRefGoogle Scholar
44.van Wees, B.J., Phys. Rev. Lett. 84 (2000) p. 5023.CrossRefGoogle Scholar
45.Filip, A.T., Hoving, B.H., Jedema, F.J., van Wees, B.J., Dutta, B., and Borghs, S., Phys. Rev. B 62 (2000) p. 9996.CrossRefGoogle Scholar
46.Schmidt, G., Ferrand, D., Molenkamp, L.W., Filip, A.T., and van Wees, B.J., Phys. Rev. B 62 (2000) p. R4790.CrossRefGoogle Scholar
47.Smith, D.L. and Silver, R.N., Phys. Rev. B 64 045323 (2001).CrossRefGoogle Scholar
48.Fert, A. and Jaffres, H., Phys. Rev. B 64 184420 (2001).CrossRefGoogle Scholar
49.Yu, Z.G. and Flatte, M., Phys. Rev. B 66 201202(R) (2002).Google Scholar
50.de Groot, R.A., Mueller, F.M., van Engen, P.G., and Buschow, K.H.J., Phys. Rev. Lett. 50 (1983) p. 2024.CrossRefGoogle Scholar
51.Pickett, W.E. and Moodera, J.S., Phys. Today 54 (5) (2001) p. 39.CrossRefGoogle Scholar
52.Orgassa, D., Fujiwara, H., Schulthess, T.C., and Butler, W.H., Phys. Rev. B 60 (1999) p. 13237.CrossRefGoogle Scholar
53.Rashba, E.I., Phys. Rev. B 62 (2000) p. R16267.CrossRefGoogle Scholar
54.Meservey, R. and Tedrow, P.M., Phys. Rep. 238 (1994) p. 173.CrossRefGoogle Scholar
55.Moodera, J.S., Kinder, L.R., Wong, T.M., and Meservey, R., Phys. Rev. Lett. 74 (1995) p. 3723.CrossRefGoogle Scholar
56.Clark, P., EE Times (February 9, 2001) p. 14.Google Scholar
57.Ilegems, M., in The Technology and Physics of Molecular Beam Epitaxy, edited by Parker, E.H.C. (Plenum Publishers, New York, 1985) p. 119.Google Scholar
58.Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981) p. 294.Google Scholar
59.Hanbicki, A.T., Jonker, B.T., Itskos, G., Kioseoglou, G., and Petrou, A., Appl. Phys. Lett. 80 (2002) p. 1240.CrossRefGoogle Scholar
60.Hanbicki, A.T., van't Erve, O.M.J., Magno, R., Kioseoglou, G., Li, C.H., Jonker, B.T., Itskos, G., Mallory, R., Yasar, M., and Petrou, A., Appl. Phys. Lett. 82 (2003) p. 4092.CrossRefGoogle Scholar
61.Albrecht, J.D. and Smith, D.L., Phys. Rev. B 66 113303 (2002).Google Scholar
62.Zhu, H.J., Ramsteiner, M., Kostial, H., Wassermeier, M., Schönherr, H.-P., and Ploog, K.H., Phys. Rev. Lett. 87 016601 (2001).Google Scholar
63.Ramsteiner, M., Hao, H.Y., Kawaharazuka, A., Zhu, H.-J., Kästner, M., Hey, R., Däweritz, L., Grahn, H.T., and Ploog, K.H., Phys. Rev. B 66 081304R (2002).CrossRefGoogle Scholar
64.Manago, T. and Akinaga, H., Appl. Phys. Lett. 81 (2002) p. 694.CrossRefGoogle Scholar
65.Motsnyi, V.N., De Boeck, J., Das, J., Van Roy, W., Borghs, G., Goovaerts, E., and Safarov, V.I., Appl. Phys. Lett. 81 (2002) p. 265.CrossRefGoogle Scholar
66.Dyakonov, M.I., Perel, V.I., Berkovits, V.L., and Safarov, V.I., Sov. Phys. JETP 40 (1975) p. 950.Google Scholar
67.Landauer, R., Philos. Mag. 21 (1970) p. 863.CrossRefGoogle Scholar
68.Büttiker, M., Imry, Y., Landauer, R., and Pinhas, S., Phys. Rev. B 31 (1985) p. 6207.CrossRefGoogle Scholar
69.Baranger, H.U. and Stone, A.D., Phys. Rev. B 40 (1989) p. 8169.CrossRefGoogle Scholar
70.MacLaren, J.M., Zhang, X.-G., Butler, W.H., and Wang, X., Phys. Rev. B 59 (1999) p. 5470.CrossRefGoogle Scholar
71.Sanvito, S. and Hill, N.A., Phys. Rev. Lett. 87 267202 (2001).CrossRefGoogle Scholar
72.Wunnicke, O., Mavropoulos, Ph., Zeller, R., Dederichs, P.H., and Grundler, D., Phys. Rev. B 65 241306(R) (2002);CrossRefGoogle Scholar
Wunnicke, O., Mavropoulos, P., and Dederichs, P.H., J. Supercond./Novel Magn. 16 (2003) p. 171.CrossRefGoogle Scholar
73.Zwierzycki, M., Xia, K., Kelly, P.J., Bauer, G.E.W., and Turek, I., Phys. Rev. B 67 092401 (2003).CrossRefGoogle Scholar
74.Jonker, B.T., in Ultrathin Magnetic Structures IV: Spintronics, edited by Bland, J.A.C. and Heinrich, B. (Springer-Verlag, Berlin) in press.Google Scholar
75.Stroud, R.M. (unpublished).Google Scholar
76.Erwin, S.C., Lee, S.-H., and Scheffler, M., Phys. Rev. B 65 205422 (2002).CrossRefGoogle Scholar
77.van Son, P.C., van Kempen, H., and Wyder, P., Phys. Rev. Lett. 58 (1987) p. 2271.CrossRefGoogle Scholar
78.Schep, K.M., van Hoof, J.B.A.N., Kelly, P.J., Bauer, G.E.W., and Inglesfield, J.E., Phys. Rev. B 56 (1997) p. 10805.CrossRefGoogle Scholar
79.Datta, S., Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1995).CrossRefGoogle Scholar
80.Brehmer, D.E., Zhang, K., Schwarz, Ch.J., Chau, S.-P., Allen, S.J., Ibbetson, J.P., Zhang, J.P., Palmstrøm, C.M., and Wilkens, B., Appl. Phys. Lett. 67 (1995) p. 1268;CrossRefGoogle Scholar
Petukhov, A.G., Lambrecht, W.R.L., and Segall, B., Phys. Rev. B 53 (1996) p. 3646.CrossRefGoogle Scholar
81.Slonczewski, J.C., Phys. Rev. B 39 (1989) p. 6995.CrossRefGoogle Scholar
82.Jullière, M., Phys. Lett. 54A (1975) p. 225.CrossRefGoogle Scholar
83.Stewart, D.A. and van Schilfgaarde, M., J. Appl. Phys. 93 (2003) p. 7355.CrossRefGoogle Scholar
84.Petukhov, A.G., Demchenko, D.O., and Chantis, A.N., to appear in Phys. Rev. B (2003), preprint available on the arXiv.org archive as http://arXiv.org/abs/cond-mat/0211300 (accessed September 2003).Google Scholar
85.Marquardt, R.R., Collins, D.A., Liu, Y.X., Ting, Z.-Y., and McGill, T.C., Phys. Rev. B 53 (1996) p. 13624.CrossRefGoogle Scholar
86.Matsukura, F., Abe, E., and Ohno, H., J. Appl. Phys. 87 (2000) p. 6442.CrossRefGoogle Scholar
87.Chen, X., Na, M., Cheon, M., Wang, S., Luo, H., McCombe, B.D., Liu, X., Sasaki, Y., Wojtowicz, T., Furdyna, J.K., Potashnik, S.J., and Schiffer, P., Appl. Phys. Lett. 81 (2002) p. 511.CrossRefGoogle Scholar
88.Crooker, S.A., Tulchinsky, D.A., Levy, J., Awschalom, D.D., Garcia, R., and Samarth, N., Phys. Rev Lett. 75 (1995) p. 505CrossRefGoogle Scholar