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Diamond surface conductivity: Properties, devices, and sensors

Published online by Cambridge University Press:  12 June 2014

Christopher I. Pakes
Affiliation:
Department of Physics, La Trobe University, Victoria, Australia; [email protected]
Jose A. Garrido
Affiliation:
Walter Schottky Institute and Physics Department, Technische Universität München, Germany; [email protected]
Hiroshi Kawarada
Affiliation:
Department of Electronics and Phonics Systems and Department of Nanoscience and Nanotechnology, Waseda University, Japan; [email protected]
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Abstract

Hydrogen termination of diamond lowers its ionization energy, driving electron transfer from the valence band into an adsorbed water layer or to a strong molecular acceptor. This gives rise to p-type surface conductivity with holes confined to a subsurface layer of a few nanometers thickness. The transfer doping mechanism, the electronic behavior of the resulting hole accumulation layer, and the development of robust field-effect transistor (FET) devices using this platform are reviewed. An alternative method of modulating the hole carrier density has been developed based upon an electrolyte-gate architecture. The operation of the resulting “solution-gated” FET architecture in two contemporary applications will be described: the charge state control of nitrogen-vacancy centers in diamond and biosensing. Despite 25 years of work in this area, our knowledge of surface conductivity of diamond continues to develop.

Type
Research Article
Copyright
Copyright © Materials Research Society 2014 

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