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Defects and doping and their role in functionalizing graphene

Published online by Cambridge University Press:  23 November 2012

Sokrates T. Pantelides ,
Yevgeniy Puzyrev ,
Leonidas Tsetseris  and
Bin Wang
Sokrates T. Pantelides
Affiliation:
Vanderbilt University and Oak Ridge National Laboratory; [email protected]
Yevgeniy Puzyrev
Affiliation:
Department of Physics and Astronomy, Vanderbilt University; [email protected]
Leonidas Tsetseris
Affiliation:
School of Applied Mathematical and Physical Sciences, National Technical University, Greece; [email protected]
Bin Wang
Affiliation:
Department of Physics and Astronomy, Vanderbilt University; [email protected]
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Abstract

Graphene is a two-dimensional material with unique properties, such as superb mechanical strength and carrier mobility. Similarly to semiconductors, however, graphene is not very useful for applications in its pristine form; rather, it must be “functionalized” through judicious manipulation of defects, impurities, and adsorbates. In this article, we provide an overview of the intrinsic defects in graphene, such as vacancies, interstitials, and line defects, and their potential role in transport and other properties. We also discuss impurities and adsorbates that can act as dopants to enhance carrier densities, controlling n- and p-type conduction for transistor applications, and can serve as reactive sites for catalytic and sensor applications. Although functionalization holds significant promise, realization of that potential remains an open pursuit.

Keywords

defects (103)dopant (186)electronic material (187)
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 12: Graphene Fundamentals and Functionalities , December 2012 , pp. 1187 - 1194
Copyright
Copyright © Materials Research Society 2012

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