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Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

Published online by Cambridge University Press:  31 January 2011

J. J. Sumakeris ,
J. R. Jenny  and
A. R. Powell
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Abstract

We discuss continuing materials technology improvements that have transformed silicon carbide from an intriguing laboratory material into a premier manufacturable semiconductor technology. This advancement is demonstrated by reduced micropipe densities as low as 0.22 cm−2 on 3-in.-diameter conductive wafers and 16 cm−2 on 100-mm-diameter conductive wafers. For high-purity semi-insulating materials, we confirm that the carbon vacancy is the dominant deep-level trapping state, and we report very consistent cross-wafer activation energies derived from temperature-dependent resistivity.Warm-wall and hot-wall SiC epitaxy platforms are discussed in terms of capability and applications. Specific procedures that essentially eliminate forward-voltage drift in bipolar SiC devices are presented in detail.

Keywords

carbon vacancydefect reductionepitaxyforward voltagehigh-puritysemi-insulating materialsHPSImicropipe closureShockley basal plane dislocationssilicon carbide
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 280 - 286
Copyright
Copyright © Materials Research Society 2005

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