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Atom probe tomography of nanoscale electronic materials

Published online by Cambridge University Press:  08 January 2016

D.J. Larson ,
T.J. Prosa ,
D.E. Perea ,
K. Inoue  and
D. Mangelinck
D.J. Larson
Affiliation:
CAMECA Instruments, Inc., USA; [email protected]
T.J. Prosa
Affiliation:
CAMECA Instruments, Inc., USA; [email protected]
D.E. Perea
Affiliation:
Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, USA; [email protected]
K. Inoue
Affiliation:
Institute for Materials Research, Tohoku University, Japan; [email protected]
D. Mangelinck
Affiliation:
Institute Materials Microelectronics Nanosciences of Provence, National Center for Scientific Research/Aix-Marseille University, France; [email protected]
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Abstract

As the characteristic length scale of electronic devices shrinks, so does the required scale for measurement techniques to provide useful feedback during development and fabrication. The current capabilities of atom probe tomography (APT), such as detecting a low number of dopant atoms in nanoscale devices or studying diffusion effects in a nanowire (NW), make this technique important for metrology on the nanoscale. Here we review recent APT investigations applied to transistors (including regions such as gate oxide, channel, source, drain, contacts, etc.), heterogeneous dopant incorporation in NWs, and Pt-based nanoparticles.

Keywords

microelectronicsnanostructuregrain boundariesatom probe tomography
Type
Research Article
Information
MRS Bulletin , Volume 41 , Issue 1: Atom Probe Tomography , January 2016 , pp. 30 - 34
Copyright
Copyright © Materials Research Society 2016 

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