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Aluminum Reflow Sputtering

Published online by Cambridge University Press:  29 November 2013

Kuniko Kikuta
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Extract

The scaling of integrated-circuit device dimensions in the horizontal direction has caused an increase in aspect ratios of contact holes and vias without a corresponding scaledown in vertical dimensions. Conventional sputtering has become unreliable for handling higher aspect-ratio via/contact holes because of its poor step coverage. Several studies have attempted to overcome this problem by using W-CVD and reflow technology. The W-CVD is used for practical device fabrications. However, this technique has several problems such as poor adhesion to SiO2, poor W surface morphology, greater resistivity than Al, and the need of an etch-back process.

Al reflow technology using a conventional DC magnetron sputtering system can simplify device-fabrication processes and achieve high reliability without Al/W interfaces. In particular, the Al reflow technology is profitable for multi-level interconnections in combination with a damascene process by using Al chemical mechanical polishing (CMP). These interconnections are necessary for miniaturized and high-speed devices because they provide lower resistivity than W and simplify fabrication processes, resulting in lower cost.

This article describes recent Al reflow sputtering technologies as well as application of via and interconnect metallization.

Type
Metallization for Integrated Circuit Manufacturing
Information
MRS Bulletin , Volume 20 , Issue 11 , November 1995 , pp. 53 - 56
Copyright
Copyright © Materials Research Society 1995

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