The aim of this investigation was to study castor, canola, and sesame vegetable oils in order to evaluate their potential use as lubricants in steel mechanical components. For this purpose, densities of each oil were evaluated using the pycnometer method, as well as their dynamic viscosities through a Brookfield DV-II rotational viscometer. Both properties were evaluated at temperatures of 25, 40 and 100 °C. Additionally, viscosity indexes were determined according to ASTM D 2270. These rheological properties were used to estimate the lubrication regime considering parameters of real contact conditions in mechanical components. Friction and wear analyses were carried out to investigate the behaviour of the vegetable oil as lubricants. Such tests were carried out at room temperature on a CSM tribometer with pin-on-disk configuration by using castor, canola and sesame oils as lubricants. AISI 4140 hardened steel against AISI 100Cr6 steel pin was used as a mechanical component. From the rheological study, it was observed that canola and sesame oils behave as dilatant fluids at the evaluated temperatures, while castor oil behaves like a Newtonian fluid at 25 and 40 °C. Castor oil showed the highest density value among oils studied, but it also exhibited the lowest value of viscosity index (271). Contrarily, sesame oil was the least dense, but it exhibited the highest viscosity index (545). On the other hand, the lubrication regime study showed that by using castor oil as a lubricant in the mechanical component (4140/100Cr6), the system worked in a mixed lubrication regime while by using canola and sesame oils the system operated in boundary lubrication conditions. Finally, the kinetic friction coefficients were different for each lubricant obtaining the lowest value with castor oil while the highest value of friction coefficient was exhibited by the sesame oil lubricant.

The replacement of the strained Si channel in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with high electron mobility III-V compound semiconductors, particularly InGaAs, is being intensively investigated as an alternative to improve the drive current at low supply voltages in sub-10 nm CMOS applications. As device scaling continues, the reduction of the source and drain contact resistance becomes one of the most difficult challenges to fabricate highly scaled III-V-MOSFETs. In this article, we describe a self-aligned process based on selective molecular beam epitaxial regrowth of InxGa1-xAs (x=0-1) raised source/drain nanowire structures on etched recessed areas of a nanopatterned HfO2 template as a key element to integrate high mobility III-V materials with high-κ dielectrics in three-dimensional device architectures. The interaction of atomic H with the surface of the HfO2 nanopatterns has been investigated by using AFM, ToF-SIMS, and ARXPS. Selective growth has been observed for all values of x between 0 and 1. AFM results show that atomic H lowers the temperature process window for InxGa1-xAs selective growth. HRTEM images have revealed the conformality of the growth and the absence of nanotrench formation near the HfO2 mask edges. InxGa1-xAs alloys grown on H-treated HfO2 patterned substrates exhibit a higher uniformity in chemical composition and full strain relaxation for x≥0.5.

Lead sulphide thin films have been successfully deposited by spin coating lead hexadecyl and octadecyl xanthate onto glass substrates and annealed at moderate temperatures. The thin films were characterized using powder x-ray diffractometer (p-XRD) and were found to be face centred cubic (FCC) with the (200) being the most preferred orientation. The optical band gaps obtained were 0.93 and 1.00 eV respectively for PbS from complexes (1) and (2) annealed at 350 °C. They were all blue shifted from the bulk value of 0.41 eV.

Ca-Mg-Si films were firstly prepared on (001)Al2O3 substrates by RF-magnetron sputtering method from Mg disc target together with Ca and Si chips. The composition of the deposited films was controlled by adjusting deposition temperature and Ca/Si area ratio of Ca and Si chips on Mg disk target. Ca0.32Mg0.33Si0.35 film deposited at 610 K consisted of a single phase of CaMgSi and this CaMgSi phase was stable after heat treated at 770 K under an atmospheric Ar with 5% -H2. As-deposited film shows the semiconductor behavior and have a power factor of 50 μW/(mK2) at 670 K, while annealed one showed the metallic behavior and its power factor down below 10 μW/(mK2) at 320-770 K. On the other hand, Ca0.27Mg0. 51Si0.2 film deposited at 590 K showed no obvious crystalline phase but became single phase of Ca7Mg7.25Si14 after heat treatment at 770 K under an atmospheric Ar with 5% -H2. As deposited film had a large power factor of 100 μW/(mK2) at 670 K. However, power factor decreased below 1 μW/(mK2) at 320-770K after the heat treatment at 770 K under an atmospheric Ar with 5% -H2.

Hernia is defined as the protrusion of one or several internal organs through an opening in the cavity that contains them due to a tissue defect, abdominal wall surgery by means of synthetic meshes is the most common method used for hernia repair, however, postsurgical effects can range from some discomfort, to chronic pain and even the reappearance of the hernia due to a poor mechanical adaptability between the synthetic tissue and the host tissue. The knowledge of the mechanical properties of the materials involved in hernia repair is fundamental in the understanding and subsequent solution of this type of problems. In this work, experimental data were obtained by means of uniaxial tensile tests in two perpendicular directions of commercial meshes used in hernia repair. The tests were carried out on the UniVert® machine of the CellScale® brand. Anisotropic mechanical behavior is observed due to the structure of the mesh and the interaction between each of the yarns that make it up. The data found vary with respect to the direction of traction and also has non-linear hyperelastic behavior, so the adjustment of curves was made through a hyperelastic model in the COMSOL Multiphysics® software through the Levenberg-Marquardt Algorithm for the characterization of these materials.

Nanoparticles of titanium dioxide (TiO2), synthesized by the sonochemical technique, were mixed with different amounts of graphene oxide (GO), obtained by the improved method of Hummer, in order to modify their bandwidth. The TiO2/OG compounds were characterized using different techniques: X-ray Diffraction (XRD), transmission electron microscopy (TEM), Raman and UV-Vis-NIR spectroscopy. TiO2 bandgap decreased, with GO incorporation, from 3.2 to 2.72 eV when GO was present at 20 weigh percentage (TiO2/GO-20%). Photodegradation experiments of methylene blue (MB) were performed with the materials to verify their photocatalytic activity. At 40 minutes, the pure TiO2 degraded 48% of MB, whereas the compound TiO2/GO-20% degraded 88%, showing a good incorporation of both compounds and the improvement of TiO2 photocatalitic properties.

We demonstrated that single-walled carbon nanotubes (SWCNTs) grew from Ir catalysts by an alcohol catalytic chemical vapor deposition (ACCVD) method using a gas source-type CVD system. At an ethanol pressure of 1×10−1 Pa at 800°C, vertically aligned SWCNTs (VA-SWCNTs) were grown on SiO2/Si substrates. As the growth time became longer, the VA-SWCNT became thicker, and it reached almost 5 μm for a growth time of 180 min. The Raman spectroscopy results showed that the diameters of the grown SWCNTs were mainly distributed below 1.1 nm, indicating that the SWCNTs grown from Ir catalysts had small diameters compared with those from other metal catalysts.

This study aims at establishing environmentally stable and viable silver nanowire (AgNW) electrodes of an Electrodynamic Screen (EDS) film, by the inclusion of one or more protective layers of zinc oxide (ZnO) produced in lab by combining tetrahydrofuran (THF) and diethylzinc (DEZ). The electrodes can be realized as 1) stacked structure where the AgNW electrode has a layer of ZnO on top for protection or 2) sandwiched structure where the AgNW electrode is covered by ZnO layers, protecting it from the top and bottom. Experiments are done to test the effect of accelerated exposure to ultraviolet light, high temperature and passage of high voltage on the AgNW samples and are compared with the results obtained from the AgNW samples that have the ZnO protective layer which have also been subjected to the aforementioned test conditions. A complete water immersion test is performed in order to ensure functionality and efficiency of the ZnO/AgNW samples that are to be patterned as electrodes of the EDS film. This will demonstrate viability of the structure in the case of rain.

Mechanism for the hardening of two-phase Ni3Al-Ni3V intermetallic alloy to which 2 at.% Ta was added in different substitution manners for Ni, Al and V was presented, based on the microstructural observation, alloying behavior and lattice properties of the additive in the constituent phases. The hardening behavior was explained in terms of solid solution hardening in which the mixture rule in the volume fraction of the two constituent phases and the atomic size misfit evaluated from the changes of the lattice parameters were incorporated. Consequently, the hardening for the alloys in which the additives were substituted for Ni and V was attributed to solid solution hardening. On the other hand, the hardening for the alloy in which the additive was substituted for Al was attributed to the hardening due to microstructural refining in addition to the solid solution hardening.