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Preparation of CaMgSi and Ca7Mg7.25Si14 single phase films and their thermoelectric properties

Published online by Cambridge University Press:  19 February 2019

Matsuo Uehara ,
Atsuo Katagiri ,
Mao Kurokawa ,
Kensuke Akiyama ,
Takao Shimizu ,
Masaaki Matsushima ,
Hiroshi Uchida ,
Yoshisato Kimura  and
Hiroshi Funakubo
Matsuo Uehara
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan.
Atsuo Katagiri
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan.
Mao Kurokawa
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan.
Kensuke Akiyama
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan. Kanagawa Institute of Industrial Science and Technology, Ebina, Kanagawa243-0435, Japan.
Takao Shimizu
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan.
Masaaki Matsushima
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan.
Hiroshi Uchida
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo102-8554, Japan.
Yoshisato Kimura
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan.
Hiroshi Funakubo*
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan.
*
*(Email: [email protected])
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Abstract

Ca-Mg-Si films were firstly prepared on (001)Al2O3 substrates by RF-magnetron sputtering method from Mg disc target together with Ca and Si chips. The composition of the deposited films was controlled by adjusting deposition temperature and Ca/Si area ratio of Ca and Si chips on Mg disk target. Ca0.32Mg0.33Si0.35 film deposited at 610 K consisted of a single phase of CaMgSi and this CaMgSi phase was stable after heat treated at 770 K under an atmospheric Ar with 5% -H2. As-deposited film shows the semiconductor behavior and have a power factor of 50 μW/(mK2) at 670 K, while annealed one showed the metallic behavior and its power factor down below 10 μW/(mK2) at 320-770 K. On the other hand, Ca0.27Mg0. 51Si0.2 film deposited at 590 K showed no obvious crystalline phase but became single phase of Ca7Mg7.25Si14 after heat treatment at 770 K under an atmospheric Ar with 5% -H2. As deposited film had a large power factor of 100 μW/(mK2) at 670 K. However, power factor decreased below 1 μW/(mK2) at 320-770K after the heat treatment at 770 K under an atmospheric Ar with 5% -H2.

Keywords

thermoelectricfilmsputteringx-ray diffraction (XRD)
Type
Articles
Information
MRS Advances , Volume 4 , Issue 25-26: Processing and Manufacturing , 2019 , pp. 1503 - 1508
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Copyright
Copyright © Materials Research Society 2019 

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References

REFERENCES

Kato, T., Sago, Y. H., and Fujiwara, H., J. Appl. Phys. 110, 063723-1-5 (2011).10.1063/1.3642965CrossRefGoogle Scholar
Galkin, N. G., Vavanova, S. V., Maalsov, A. M., Galkin, K. N., Garasimenko, A. V., and Kaidalova, T. A., Thin Solid Films 515, 8230-8236 (2007).10.1016/j.tsf.2007.02.049CrossRefGoogle Scholar
Vantomme, A., Langouche, G., Mahan, J. E., and Becker, J. P., Microelectron Eng . 50, 237-242 (2000).10.1016/S0167-9317(99)00287-7CrossRefGoogle Scholar
Tani, J. and Kido, H., J. Ceram. Soc. Jpn. 123, 298-301 (2015).10.2109/jcersj2.123.298CrossRefGoogle Scholar
Kajikawa, T., Shiba, K., Shiraishi, K., and Ito, T., 17th Inter. Conf. Proc. Thermoelectronics 17, 362-369 (1998).Google Scholar
Ogawa, S., Katagiri, A., Shimizu, T., Matsushima, M., Akiyama, K., Kimura, Y., Uchida, H., and Funakubo, H., J. Electro. Mater. 43, 2269-2273 (2014).10.1007/s11664-014-3040-6CrossRefGoogle Scholar
Akiyama, K., Katagiri, A., Ogawa, S., Matsushima, M., and Funakubo, H., Phys. Status Solidi C 10 1688-1691 (2013).10.1002/pssc.201300332CrossRefGoogle Scholar
Katagiri, A., Ogawa, S., Uehara, M., Sankara Rama Krishnan, P.S., Kurokawa, M., Matsushima, M., Shimizu, T., Akiyama, K., Funakubo, H., J. Mater. Sci. 53, 5151-5158, (2018).CrossRefGoogle Scholar
Kurokawa, M., Shimizu, T., Uehara, M., Katagiri, A., Akiyama, K., Matsushima, M., Uchida, H., Imura, Y., and Funakubo, H., Mater. Res. Soc. Proc. 1642 (2014) DOI:10.1557/adv.2018.150.Google Scholar
McDonough, W.F. and Sun, S., Chem. Geol. 120, 223-253 (1995).CrossRefGoogle Scholar
Niwa, Y., Todaka, Y., Masuda, T., Kawai, T., and Umemoto, M., Mater. Trans. 50, 1725-1729 (2009).CrossRefGoogle Scholar
Grobner, J., Chumak, I., and Schmid-Fetzer, R., Intermetallics. 111, 1065-1074 (2003).10.1016/j.intermet.2003.07.001CrossRefGoogle Scholar