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Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled nMOS devices

Published online by Cambridge University Press:  06 February 2019

Paloma Tejedor  and
Marcos Benedicto
Paloma Tejedor*
Affiliation:
Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC. Sor Juana Inés de la Cruz 3, 28049-Madrid, Spain.
Marcos Benedicto
Affiliation:
Universidad Pontificia Comillas ICAI-ICADE, Alberto Aguilera 23, 28015-Madrid, Spain.
*
*(Email: [email protected])

Abstract

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The replacement of the strained Si channel in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with high electron mobility III-V compound semiconductors, particularly InGaAs, is being intensively investigated as an alternative to improve the drive current at low supply voltages in sub-10 nm CMOS applications. As device scaling continues, the reduction of the source and drain contact resistance becomes one of the most difficult challenges to fabricate highly scaled III-V-MOSFETs. In this article, we describe a self-aligned process based on selective molecular beam epitaxial regrowth of InxGa1-xAs (x=0-1) raised source/drain nanowire structures on etched recessed areas of a nanopatterned HfO2 template as a key element to integrate high mobility III-V materials with high-κ dielectrics in three-dimensional device architectures. The interaction of atomic H with the surface of the HfO2 nanopatterns has been investigated by using AFM, ToF-SIMS, and ARXPS. Selective growth has been observed for all values of x between 0 and 1. AFM results show that atomic H lowers the temperature process window for InxGa1-xAs selective growth. HRTEM images have revealed the conformality of the growth and the absence of nanotrench formation near the HfO2 mask edges. InxGa1-xAs alloys grown on H-treated HfO2 patterned substrates exhibit a higher uniformity in chemical composition and full strain relaxation for x≥0.5.

Keywords

molecular beam epitaxy (MBE)self-assemblysemiconductingelectronic materialnanostructure
Type
Articles
Information
MRS Advances , Volume 4 , Issue 5-6: Nanomaterials , 2019 , pp. 337 - 342
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © Materials Research Society 2019

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