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Ultra-thin LiF Layer As The Electron Collector For a-Si:H Based Photovoltaic Cell

Published online by Cambridge University Press:  07 March 2017

Erenn Ore ,
Jimmy Melskens ,
Arno Smets ,
Miro Zeman  and
Gehan Amaratunga
Erenn Ore*
Affiliation:
Department Of Engineering, University Of Cambridge, Cambridge CB3 0FA, United Kingdom. Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Jimmy Melskens
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Arno Smets
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Miro Zeman
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Gehan Amaratunga
Affiliation:
Department Of Engineering, University Of Cambridge, Cambridge CB3 0FA, United Kingdom.
*
*(Email: [email protected])
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Abstract

An ultra-thin LiF layer in conjunction with an Al layer is employed as the electron collector for the a-Si:H based single-junction thin film photovoltaic cell. The cell has the structure of boron doped μ-SiOx (hole collector) - intrinsic a-Si:H (photoactive layer) - LiF / Al (electron collector and back electrode). The substrate used is U type Asahi glass, which is also acting as the transparent front electrode. For the cell with the 1.5 nm thick LiF layer, annealed at 120°C, the open current voltage (VOC) of 0.936 V, the short current density (JSC) of 13.598 mA/cm2, and the fill factor (FF) of 0.690 are achieved. The JSC and VOC values are comparable to the values measured for the a-Si:H based p-i-n reference cell, but the FF value is found to be lower, which is attributed to the losses due to recombination at the intrinsic a-Si:H / LiF / Al junction. The current versus voltage measurements are carried out under the standard test conditions. The JSC values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 spectrum region between 270 nm and 800 nm.

Keywords

amorphousphotovoltaicthin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 15: Nanomaterials , 2017 , pp. 863 - 867
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Fthenakis, V. M., Moskowitz, P. D., Solar Cells 22, 303 (1987).CrossRefGoogle Scholar
Roessler, D. M., Walker, W. C., Phys, J.. Chem. Solids 28, 1507 (1967).CrossRefGoogle Scholar
Hagg, L., Reinhold, C. O., Burgdorfer, J., Phys. Rev. A 55(3), 2097 (1997).Google Scholar
Schlaf, R., Parkinson, B. A., Lee, P. A., Nebesny, K. W., Jabbour, G., Kippelen, B., Peyghambarian, N., Armstrong, N. R., J. Appl. Phys. 84(12), 6729 (1998).Google Scholar
Ephron, D., Beasley, M. R., Bahlouli, H., Matveev, K. A., Phys. Rev.B 49(4), 2989 (1994).Google Scholar
Ore, E., Amaratunga, G., in IEEE 40th Photovoltaic Specialist Conference, Denver, Colorado (2014)Google Scholar
Hasegawa, T., Miura, S., Moriyama, T., Kimura, T., Takaya, I., Osato, Y., Mizutani, H., SID Symposium Digest of Technical Papers 35(1), 154 (2004).Google Scholar
Li, G., Chu, C. W., Shrotriya, V., Huang, J., Yang, Y., Appl. Phys. Lett. 88(25), 253503 (2006).Google Scholar
Hung, L. S., Tang, C. W., Mason, M. G., Appl. Phys. Lett. 70(2), 152 (1997).CrossRefGoogle Scholar
Brabec, C. J., Shaheen, S. E., Winder, C., Sariciftci, N., Denk, P., Appl. Phys. Lett. 80(7), 1288 (2002).Google Scholar
Yang, J., Myong, S. Y., Lim, K. S., IEEE Electron Device Lett.., 35(1), 102 (2014).Google Scholar
Yang, J., Myong, S. Y., Lim, K. S., Sol. Energy 114, 259 (2015).Google Scholar
Kim, S., Lee, J., Dao, V. A., Lee, S., Balaji, N., Ahn, S., Hussain, S. Q., Han, S., Jung, J., Jang, J., Lee, Y., Yi, J., Mater. Sci. Eng. B 178, 660 (2013).Google Scholar
Muller, J., Rech, B., Springer, J., Vanecek, M., Sol. Energy 77, 917 (2004).Google Scholar