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Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells

Published online by Cambridge University Press:  16 July 2019

Toshiki Miyatani ,
Yusuke Nishi  and
Tsunenobu Kimoto
Toshiki Miyatani*
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto615-8510, Japan
Yusuke Nishi
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto615-8510, Japan
Tsunenobu Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto615-8510, Japan
*
*(Email: [email protected])
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Abstract

Impacts of a forming process on bipolar resistive switching (RS) characteristics in Pt/TaOx/Ta2O5/Pt cells were investigated. We found that the forming resulted in a transition from an initial state to a particular high resistance state (HRS) in most of the Pt/TaOx/Ta2O5/Pt cells. Evaluation of electrical characteristics after the transition to the particular HRS revealed that two modes of bipolar RS with the conventional polarity based on valence change mechanism and with the opposite polarity could be selectively obtained by adjusting the magnitude of the applied voltage. Moreover, the cell resistance decreased gradually during set processes in the bipolar RS with the opposite polarity.

Keywords

oxidememoryfilamentary
Type
Articles
Information
MRS Advances , Volume 4 , Issue 48: Electronics and Photonics , 2019 , pp. 2601 - 2607
Copyright
Copyright © Materials Research Society 2019 

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