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Transmittance, Absorbance and Emission of Ga related Defects in Ga-doped ZnO Nanocrystal Films

Published online by Cambridge University Press:  29 October 2020

Tetyana V. Torchynska ,
Brahim El Filali ,
Jose L. Casas Espinola ,
Chetzyl I. Ballardo Rodriguez ,
Georgiy Polupan  and
Lyudmyla Shcherbyna
Tetyana V. Torchynska*
Affiliation:
Instituto Politécnico Nacional, ESFM, México City, 07738, México
Brahim El Filali
Affiliation:
Instituto Politécnico Nacional, UPIITA, México City, 07320, México
Jose L. Casas Espinola
Affiliation:
Instituto Politécnico Nacional, ESFM, México City, 07738, México
Chetzyl I. Ballardo Rodriguez
Affiliation:
Instituto Politécnico Nacional, UPIITA, México City, 07320, México
Georgiy Polupan
Affiliation:
Instituto Politécnico Nacional, ESIME México City, 07738, México
Lyudmyla Shcherbyna
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03028, Ukraine
*
Corresponding author E mail: [email protected]
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Abstract

ZnO films grown by ultrasonic spray pyrolysis with different Ga contents in the range of 1.0-6.5 at% on quartz substrates have been studied. The ZnO:Ga films were annealed at 400°C for 4h in a nitrogen flow. Morphology, emission, transmittance, absorbance and electrical resistivity were controlled. It is revealed that with a small content of Ga ≤ 4.0 at%, the ZnO:Ga films maintain a flat morphology, their transmittance increases to 86% together with the increase of the ZnO optical bandgap to 3.28 eV and the intensity enlargement of the near band edge (NBE) emission band A (3.188 eV). Furthermore, the new NBE emission band B (3.072 eV) appears in photoluminescence (PL) spectra at Ga contents ≥ 1.5 at%. Simultaneously, the process of decreasing electrical resistivity becomes saturating. The last effect is attributed to the self-compensation effect in n-type ZnO:Ga films related to the generation of acceptor type complexes (VZn2- - GaZn+). The thermal quenching of the PL intensities of the A and B PL bands is studded at 18-290K, which allows assigning the PL band A to the LO-phonon replica of the free exciton emission and the band B to the emission in donor-acceptor pairs: shallow donors - acceptor complexes (VZn2- - GaZn+). The NBE emission intensity drops and the ZnO optical bandgap demonstrates the shift to a lower energy at Ga doping up to ≤ 6.5 at%. Optimal Ga concentrations have been estimated to produce ZnO:Ga films with flat morphology, high optical transmittance and bright NBE emission.

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Articles
Information
MRS Advances , Volume 5 , Issue 59-60: International Materials Research Congress XXIX , 2020 , pp. 3015 - 3022
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Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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