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Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)

Published online by Cambridge University Press:  18 May 2016

D. Convertino
Affiliation:
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy Laboratorio NEST – Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
A. Rossi
Affiliation:
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy Laboratorio NEST – Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
V. Miseikis
Affiliation:
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
V. Piazza
Affiliation:
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
C. Coletti*
Affiliation:
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
*
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Abstract

This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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