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Theoretical Investigations Of Interfacial Scattering Effects On Thermoelectric Properties Of Bulk Nanostructured PbTe System

Published online by Cambridge University Press:  15 January 2018

Neeleshwar Sonnathi ,
Anjali Panwar ,
Vikas Malik  and
Anjana Bagga
Neeleshwar Sonnathi*
Affiliation:
Guru Gobind Singh Indraprastha University, New Delhi, India.
Anjali Panwar
Affiliation:
Guru Gobind Singh Indraprastha University, New Delhi, India.
Vikas Malik
Affiliation:
Jaypee Institue of Information Technology, Noida , UP, India
Anjana Bagga
Affiliation:
Guru Gobind Singh Indraprastha University, New Delhi, India.
*
*email:[email protected]
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Abstract

Enhancement of thermoelectric properties at room temperature has been recently demonstrated by spark plasma sintered PbTe nanocubes as compared to other PbTe nanostructures as well as Bulk material. The Seebeck coefficient has been reported to be 400 µV/K which is much higher than the bulk. Moreover, a moderate electrical conductivity ∼ 8000 S/m at room temperature results in considerable higher value of power factor S2σ ∼ 1.28 x 10-3 Wm-1K-2. The enhanced thermoelectric properties have been conjectured to be present due to energy filtering effects at numerous interfaces introduced by nanostructuring. We study how the interfacial scattering affects the power factor by performing theoretical modelling based on Boltzmann Transport Equation (BTE). We also investigate in detail, the role of various electronic parameters such as size, shape, mobility and effective mass etc., on interfacial scattering to optimize its effect on power factor.

Keywords

nanostructurethermoelectricsemiconducting
Type
Articles
Information
MRS Advances , Volume 3 , Issue 24: Energy and Sustainability , 2018 , pp. 1329 - 1334
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Copyright
Copyright © Materials Research Society 2018 

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References

REFERENCES

Harman, T. C., Walsh, M. P., Laforge, B. E. and Turner, G. W., J. Elecron. Mater. 34, L19 (2005).Google Scholar
Martin, J., Nolas, G. S., Zhang, W., and Chen, L., Appl. Phys. Lett. 90, 222112 (2007).Google Scholar
Vinesis, C. J., Harman, T. C., Calawa, S. D., Walsh, M. P., Reeder, R. E., Singh, R., and Shakouri, A., Phys. Rev. B 77, 235202 (2008).Google Scholar
Bahk, Je-Hyeong, Bian, Zhixi, Shakouri, Ali, Phys. Rev. B 87, 075204 (2013).Google Scholar
Popescu, A., Woods, L. M., Martin, J., and Nolas, G.S., Phys. Rev. B 79, 205302 (2009).Google Scholar
Nishio, Y. and Hirano, T., Proceedings ICT98, 17th International Conference in Thermoelectrics, Nagoya, Japan, p. 111–114, (1998).Google Scholar
Zeittili, N., Quantum Mechanics: Concepts and Applications (Wiley, Chichester, 2001).Google Scholar
Khasimsaheb, B., Neeleshwar, S., Srikanth, M., Bathula, S., Gahtori, B., Srivsatava, A. K., Dhar, A, Sankarakumar, A., Panigrahi, B. K., Bhattacharya, S., J. Mater. Res., 30, 2638–2648 (2015).Google Scholar