Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-24T15:25:24.788Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers

Published online by Cambridge University Press:  26 February 2018

M. Gaddy ,
V. Kuryatkov ,
V. Meyers ,
D. Mauch ,
J. Dickens ,
A. Neuber  and
S. Nikishin
M. Gaddy*
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
V. Kuryatkov
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
V. Meyers
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
D. Mauch
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
J. Dickens
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
A. Neuber
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
S. Nikishin
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX79401UNCLASSIFIED Distribution A: Approved for public release
*
*(Email: [email protected])
Get access

Abstract

Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ray diffraction, cathodoluminescence, photoluminescence, and high voltage testing. Although the Fe doping level is significantly different for each growth method, both are promising for the fabrication of PCSS devices operating in the lock-on mode.

Keywords

x-ray diffraction (XRD)secondary ion mass spectroscopy (SIMS)optical properties
Type
Articles
Information
MRS Advances , Volume 3 , Issue 3: Electronics, Magnetics and Photonics , 2018 , pp. 179 - 184
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Leach, J. H., Metzger, R., Preble, E. A., and Evans, K. R., Proc. SPIE 8625, 86251Z–1 (2014)CrossRefGoogle Scholar
Mauch, D., Dickens, J., Kuryatkov, V., Meyers, V., Ness, R., Nikishin, S., and Neuber, A. Proc. Pulsed Power Conf. (PPC), 20th IEEE, June 2015.Google Scholar
Meyers, V., Mauch, D., Mankowski, J., Dickens, J., and Neuber, A. Proc. Pulsed Power Conf. (PPC), 20th IEEE, June 2015.Google Scholar
Heikman, S., Keller, S., DenBaars, S. P., and Mishra, U. K., Appl. Phys. Lett., 81, 439 (2002).CrossRefGoogle Scholar
Feng, Z. H., Liu, B., Yuan, F. P., Yin, J. Y., Liang, D., Li, X. B., Feng, Z., Yang, K. W., Cai, S. J., 309, J. Cryst. Growth 309, 8 (2007).CrossRefGoogle Scholar
Lopatiuk, O., Osinsky, A., Dabiran, A., Gartsman, K., Feldman, I., and Chernyak, L., Solid-State Electron. 49, 1662 (2005).CrossRefGoogle Scholar
Kashiwagi, T., Sonoda, S., Yashiro, H., Ishihara, Y., Usui, A., Akasaka, Y., and Hagiwara, M., Jpn. J. Appl. Phys., Part 1 46, 581 (2007).CrossRefGoogle Scholar
Kubota, M., Onuma, T., Ishihara, Y., Usui, A., Uedono, A., and Chichibu, S. F., J. Appl. Phys., 105, 083542 (2009).CrossRefGoogle Scholar
Lipski, F., Annual Report 2010, Institute of Optoelectronics, Ulm University, pp.63–70 (2010).Google Scholar
Dwilinski, R., Wysmolek, A., Baranowski, J., Kaminska, M., Doradzinski, R., Garczynski, J., Sierzputowski, L., and Jacobs, H., Acta Physica Polonica A, 88, 833 (1995).CrossRefGoogle Scholar
Hashimoto, T., Fujito, K., Wu, F., Haskell, B. A., Fini, P. T., Speck, J. S. and Nakamura, S., Jpn. J. Appl. Phys. 44, L 797 (2005).CrossRefGoogle Scholar
Callahan, M., Wang, B. G., Rakes, K., Bliss, D., Bouthillette, L., Suscavage, M., and Wang, S. Q.: J. Mater. Sci. 41 1399 (2006).CrossRefGoogle Scholar
Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L. P., Puchalski, A., Kanbara, Y., Yagi, K., Minakuchi, H., and Hayashi, H., J. Cryst. Growth 310, 391 (2008).CrossRefGoogle Scholar
Richter, T. M. M. and Niewa, R, Inorganics 2, 29 (2014).CrossRefGoogle Scholar
Chierchia, R., Böttcher, T., Heinke, H., Einfeldt, S., Figge, S., and Hommel, D., J. Appl. Phys. 93, 8918 (2003).CrossRefGoogle Scholar
Metzger, T., Höpler, R., Born, E., Ambacher, O., Stutzmann, M., Stömmer, R., Schuster, M., Göbel, H., Christiansen, S., Albrecht, M., and Strunk, H. P., Philos. Mag. A 77, 1013 (1998).CrossRefGoogle Scholar
Kaganer, V. M., Brandt, O., Trampert, A., and Ploog, K. H., Phys. Rev. B 72, 045423 (2005).CrossRefGoogle Scholar
Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, 1 st Edition., by Wilson, R.G., Stevie, F. A., Magee, C. W., Wiley-Interscience (1989).Google Scholar
Demchenko, D. O., Diallo, I. C., and Reshchikov, M. A., J. Appl. Phys. 119, 035702 (2016).CrossRefGoogle Scholar
Godlewski, M., Przybylinska, H., Bozek, R., Goldys, E. M., Bergman, J. P., Monemar, B., Grzegory, I., and Porowski, S., Phys. Stat. Sol (a) 201, 216 (2004).CrossRefGoogle Scholar
Reshchikov, M. A., McNamara, J. D., Toporkov, M., Avrutin, V., Morkoç, H., Usikov, A., Helava, H., and Makarov, Yu., Sci. Rep 6, 37511 (2016).CrossRefGoogle Scholar
Kubota, M., Onuma, T., Ishihara, Y., Usui, A., Uedono, A., and Chichibu, S. F., J. Appl. Phys. 105, 083542 (2009).CrossRefGoogle Scholar
Look, D. C., Leach, J. H., and Metzger, R., J. Appl. Phys., 121, 065702 (2017).CrossRefGoogle Scholar