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Stress-induced surface characterization by wavelet and fractal analysis in Ga-doped ZnO thin films

Published online by Cambridge University Press:  09 May 2017

Chenlei Jing ,
Yang Hu  and
Wu Tang
Chenlei Jing
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
Yang Hu
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
Wu Tang*
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
*
*(Email: [email protected])
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Abstract

The Ga-doped ZnO (GZO) were deposited by magnetron reactive sputtering on glass substrates at room temperature with different deposited times to obtain various thickness. The root-mean-square (RMS) roughness obtained from the atomic force microscopy (AFM) images is observed to shift linearly with the deposited time, the fractal geometry and multi-resolution signal decomposition (MRSD) based on wavelet transform were applied on the surface profiles and the results does not synchronously changes as the thickness, which is related to the profile’s frequency. The calculated compressive in-plane stress of highly c-axis oriented GZO films also shows an irregular variation as the increase of film thickness, what’s more, the in-plane stress and fractal dimension exhibit a polynomial relationship and the two parameters can be used for describing the surface morphology.

Keywords

morphologystress/strain relationshipII-VI
Type
Articles
Information
MRS Advances , Volume 2 , Issue 53: Energy Storage and Conversion , 2017 , pp. 3105 - 3110
Copyright
Copyright © Materials Research Society 2017 

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