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Selective fabrication of Si nanodots and nanowires

Published online by Cambridge University Press:  17 June 2016

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A. Center for Security Printing and Anti-Counterfeiting Technology, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*(Email: [email protected])
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Abstract

We report observation of narrow nanowires and high density nanodots on the Si(001) surfaces when they are exposed to a single application of interferential irradiation of laser pulses of 7 ns. These nanostructures form selectively depending on interference parameters so that their placements can be controlled by controlling the parameters. The morphologies of the nanostructures are studied by atomic force microscopy. The nanowire width increases with interference period. The narrowest nanowires observed have the width smaller than 26 nm, which is eight times smaller than the interference period while the nanodots have a very large density of 1.8 ± 0.45) × 1011/cm2.

Keywords

self-assemblyscanning probe microscopy (SPM)Si
Type
Articles
Information
MRS Advances , Volume 1 , Issue 33: Nanotechnology , 2016 , pp. 2337 - 2343
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Tsutsumi, T., Ishii, K., Suzuki, E., Hiroshima, H., Yamanaka, M., Sakata, I., Kanemaru, S., Hazra, S., Maeda, T., Tomizawa, K., Single electron memory characteristic of silicon nanodot nanowire transistor, Electronics Letters, 36 (2000) 1322–1323.CrossRefGoogle Scholar
Cho, E.-C., Park, S., Hao, X., Song, D., Conibeer, G., Park, S.-C., Green, M.A., Silicon quantum dot/crystalline silicon solar cells, Nanotechnology, 19 (2008) 245201.CrossRefGoogle ScholarPubMed
Zhai, T., Zhang, X., Pang, Z., Dou, F., Direct Writing of Polymer Lasers Using Interference Ablation, Advanced Materials, 23 (2011) 1860–1864.CrossRefGoogle ScholarPubMed
Favazza, C., Trice, J., Kalyanaraman, R., Sureshkumar, R., Self-organized metal nanostructures through laser-interference driven thermocapillary convection, Applied Physics Letters, 91 (2007) 043105–043103.CrossRefGoogle Scholar
Favazza, C., Trice, J., Krishna, H., Kalyanaraman, R., Laser-induced patterning of Co nanostructures under ambient conditions, in: Materials Research Society, MRS, Boston, 2005, pp. Y04–06.Google Scholar
Kelly, M.K., Ambacher, O., Dahlheimer, B., Groos, G., Dimitrov, R., Angerer, H., Stutzmann, M., Optical patterning of GaN films, Applied Physics Letters, 69 (1996) 1749–1751.CrossRefGoogle Scholar
Clegg, C.M., Yang, H., Guided assembly of quantum dots through selective laser heating, Solar Energy Materials and Solar Cells, 108 (2013) 252–255.CrossRefGoogle Scholar
Long, J.P., Goldenberg, S.S., Kabler, M.N., Pulsed laser-induced photochemical decomposition of GaAs(110) studied with time-resolved photoelectron spectroscopy using synchrotron radiation, Physical Review Letters, 68 (1992) 1014.CrossRefGoogle ScholarPubMed
Haghizadeh, A., Yang, H., Direct laser fabrication of GaAs nanostructures on GaAs(001) in MBE reactor in-situ, in: SPIE Proceedings, 2015, pp. 93520P-93520P-93528.Google Scholar
Rezek, B., Nebel, C.E., Stutzmann, M., Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization, Journal of Applied Physics, 91 (2002) 4220–4228.CrossRefGoogle Scholar
Shank, C.V., Schmidt, R.V., Optical technique for producing 0.1-μ periodic surface structures, Applied Physics Letters, 23 (1973) 154–155.CrossRefGoogle Scholar
Savas, T.A., Farhoud, M., Smith, H.I., Hwang, M., Ross, C.A., Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography, Journal of Applied Physics, 85 (1999) 6160–6162.CrossRefGoogle Scholar
Zhao, W., Verhoef, R.W., Asscher, M., Diffusion of potassium on Re(001) investigated by coverage grating-optical second-harmonic diffraction, J. Chem. Phys., 107 (1997) 5554–5560.CrossRefGoogle Scholar
Phillips, H.M., Callahan, D.L., Sauerbrey, R., Szabó, G., Bor, Z., Sub-100 nm lines produced by direct laser ablation in polyimide, Applied Physics Letters, 58 (1991) 2761–2763.CrossRefGoogle Scholar
Haghizadeh, A., Yang, H., Direct laser fabrication of nanostructures on Si(001), MRS Online Proceedings Library, 1748 (2015).CrossRefGoogle Scholar
Jo, M., Mano, T., Sakuma, Y., Sakoda, K., Extremely high-density GaAs quantum dots grown by droplet epitaxy, Applied Physics Letters, 100 (2012) 212113.CrossRefGoogle Scholar
Lugomer, S., Maksimović, A., Karacs, A., Toth, A.L., Nanostructuring of a silicon surface by laser redeposition of Si vapor, Journal of Applied Physics, 106 (2009) 114308.CrossRefGoogle Scholar
Yoo, J.H., Jeong, S.H., Mao, X.L., Greif, R., Russo, R.E., Evidence for phase-explosion and generation of large particles during high power nanosecond laser ablation of silicon, Applied Physics Letters, 76 (2000) 783–785.CrossRefGoogle Scholar
Craciun, V., Craciun, D., Bunescu, M.C., Boulmer-Leborgne, C., Hermann, J., Subsurface boiling during pulsed laser ablation of Ge, Physical Review B, 58 (1998) 6787–6790.CrossRefGoogle Scholar
Karnakis, D.M., High power single-shot laser ablation of silicon with nanosecond 355 nm, Applied Surface Science, 252 (2006) 7823–7825.CrossRefGoogle Scholar