Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-08T10:31:22.931Z Has data issue: false hasContentIssue false
  • English
  • Français

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

Published online by Cambridge University Press:  16 January 2018

C. Strobel ,
T. Sandner  and
S. Strehle
C. Strobel
Affiliation:
Ulm University, Institute of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081Ulm, Germany
T. Sandner
Affiliation:
Ulm University, Institute of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081Ulm, Germany
S. Strehle*
Affiliation:
Ulm University, Institute of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081Ulm, Germany
*
*(Email: [email protected])
Get access

Abstract

Memristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Keywords

memoryorganicpolymer
Type
Articles
Information
MRS Advances , Volume 3 , Issue 33: Electronics, Magnetics and Photonics , 2018 , pp. 1943 - 1948
Check for updates
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

Jeong, D.S., et al., Adv. Electron. Mater. 2, 1600090 (2016)Google Scholar
Ielmini, D. and Waser, R., Resistive switching - From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications (Weinheim: Wiley-VCH 2016)Google Scholar
Jeong, D.S., et al., Solid-State Lett., 10, G51 (2007)CrossRefGoogle Scholar
Nardi, F., et al., IEEE Int. El. Devices Meet., 31.1.1 (2011)Google Scholar
Wang, H., et al., Adv. Mater. 25, 5498 (2013)CrossRefGoogle Scholar
Hosseini, N.R., Lee, J.-S., Adv. Funct. Mater. 35, 5586 (2015); ACS Nano 9, 419(2015); ACS Appl. Mater. Inter. 8, 7326 (2016); J. Electroceram. 39, 223 (2017)Google Scholar
Islam, S., et al., J. Polym. Environ. 25, 854 (2017)Google Scholar
Wang, W., et al, Life Sci. 82, 190 (2008)Google Scholar
Yong, S.K., et al., Rev. Environ. Contam. Toxicol. 233, 1 (2015)Google Scholar
Yang, Y., et al., Nat. Commun. 5, 4232 (2014)Google Scholar