Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T08:49:21.190Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability of Metal Gate / High-k devices and its impact on CMOS technology scaling

Published online by Cambridge University Press:  25 July 2017

Andreas Kerber
Andreas Kerber*
Affiliation:
GLOBALFOUNDRIES Inc., 400 Stone Break Road extension, Malta, NY 12020, USA
*
*(Email: [email protected])
Get access

Abstract

MG/HK was introduced into CMOS technology and enabled scaling beyond the 45/32nm technology node. The change in gate stack from poly-Si/SiON to MG/HK introduced new reliability challenges like the positive bias temperature instability (PBTI) and stress induced leakage currents (SILC) in nFET devices which prompted thorough investigation to provide fundamental understanding of these degradation mechanisms and are nowadays well understood. The shift to a dual-layer gate stack also had a profound impact on the time dependent dielectric breakdown (TDDB) introducing a strong polarity dependence in the model parameter. As device scaling continues, stochastic modeling of variability, both at time zero and post stress due to BTI, becomes critical especially for SRAM circuit aging. As we migrate towards novel device architectures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices, impact of self-heating needs to be accounted for in reliability testing.

In this paper we summarize the fundamentals of MG/HK reliability and discuss the reliability and characterization challenges related to the scaling of future CMOS technologies.

Keywords

dielectricdeviceselectrical properties
Type
Articles
Information
MRS Advances , Volume 2 , Issue 52: Electronic Devices and Materials , 2017 , pp. 2973 - 2982
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Manchanda, L., Green, M.L., van Dover, R.B., Morris, M.D., Kerber, A., Hu, Y., Han, J.-P., Silverman, P.J., Sorsch, T.W., Weber, G., Donnelly, V., Pelhos, K., Klemens, F., Ciampa, N.A., Kornblit, A., Kim, Y.O., Bower, J.E., Barr, D., Ferry, E., Jacobson, D., Eng, J., Busch, B., Schulte, H., Digest International Electron Device Meeting, pp. 23 – 26 (2000).Google Scholar
Buchanan, D. A., Gusev, E. P., Cartier, E., Okorn-Schmidt, H., Rim, K., Gribelyuk, M. A., Mocuta, A., Ajmera, A., Copel, M., Guha, S., Bojarczuk, N., Callegari, A., D’Emic, C., Kozlowski, P., Chan, K., Fleming, R. J., Jamison, P. C., Brown, I., Arndt, R., Digest International Electron Device Meeting, pp. 223–22 (2000).Google Scholar
Mistry, K., Allen, C., Auth, C., Beattie, B., Bergstrom, D., Bost, M., Brazier, M., Buehler, M., Cappellani, A., Chau, R., Choi, C.-H., Ding, G., Fischer, K., Ghani, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., He, J., Hicks, J., Huessner, R., Ingerly, D., Jain, P., James, R., Jong, L., Joshi, S., Kenyon, C., Kuhn, K., Lee, K., Liu, H., Maiz, J., Mclntyre, B., Moon, P., Neirynck, J., Pae, S., Parker, C., Parsons, D., Prasad, C., Pipes, L., Prince, M., Ranade, P., Reynolds, T., Sandford, J., Shifren, L., Sebastian, J., Seiple, J., Simon, D., Sivakumar, S., Smith, P., Thomas, C., Troeger, T., Vandervoorn, P., Williams, S., and Zawadzki, K., Digest International Electron Device Meeting, pp. 247–250 (2007).Google Scholar
Packan, P., Akbar, S., Armstrong, M., Bergstrom, D., Brazier, M., Deshpande, H., Dev, K., Ding, G., Ghani, T., Golonzka, O., Han, W., He, J., Heussner, R., James, R., Jopling, J., Kenyon, C., Lee, S-H., Liu, M, Lodha, S., Mattis, B., Murthy, A., Neiberg, L., Neirynck, J., Pae, S., Parker, C., Pipes, L., Sebastian, J., Seiple, J., Sell, B., Sharma, A., Sivakumar, S., Song, B., Amour, A. St., Tone, K., Troeger, T., Weber, C., Zhang, K., Luo, Y., Nataraja, S., Digest International Electron Device Meeting, pp. 659–662 (2009).Google Scholar
Krishnan, S., Kwon, U., Moumen, N., Stoker, M.W., Harley, E.C.T., Bedell, S., Nair, D., Greene, B., Henson, W., Chowdhury, M., Prakash, D.P., Wu, E., Ioannou, D., Cartier, E., Na, M.-H., Inumiya, S., Mcstay, K., Edge, L., Iijimal, R., Cai, J., Frank, M., Hargrove, M., Kerber, A., Jagannathan, H., Ando, T., Shepard, J., Siddiqui, S., Dai, M., Bu, H., Schaeffer, J., Jaeger, D., Barla, K., Wallner, T., Uchimural, S., Lee, Y., Karve, G., Zafar, S., Schepis, D., Wang, Y., Donaton, R., Saroop, S., Montanini, P., Liang, Y., Stathis, J., Carter, R., Pal, R., Paruchuri, V., Yamasaki, H., Lee, J-H., Ostermayr, M., Han, J-P., Hu, Y., Gribelyuk, M., Park, D.-G., Chen, X., Samavedam, S., Narasimha, S., Agnello, P., Khare, M., Divakaruni, R., Narayanan, V., Chudzik, M., Digest International Electron Device Meeting, pp. 634–637 (2011).Google Scholar
Auth, C., Allen, C., Blattner, A., Bergstrom, D., Brazier, M., Bost, M., Buehler, M., Chikarmane, V., Ghani, T., Glassman, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., Hentges, P., Heussner, R., Hicks, J., Ingerly, D., Jain, P., Jaloviar, S., James, R., Jones, D., Jopling, J., Joshi, S., Kenyon, C., Liu, H., McFadden, R., McIntyre, B., Neirynck, J., Parker, C., Pipes, L., Post, I., Pradhan, S., Prince, M., Ramey, S., Reynolds, T., Roesler, J., Sandford, J., Seiple, J., Smith, P., Thomas, C., Towner, D., Troeger, T., Weber, C., Yashar, P., Zawadzki, K., Mistry, K., VLSI Technology Symposium, pp. 131–132 (2012).Google Scholar
Ramey, S., Ashutosh, A., Auth, C., Clifford, J., Hattendorf, M., Hicks, J., James, R., Rahman, A., Sharma, V., St Amour, A., Wiegand, C., Proc. Int. Rel. Phys. Symp., pp. 4C.5.1 - 4C.5.5 (2013).Google Scholar
Liu, Changze, Sagong, Hyun-Chul, Kim, Hyejin, Choo, Seungjin, Lee, Hyunoo, Kim, Yoohwan, Kim, Hyunjin, Jo, Bisung, Jin, Minjung, Kim, Jinjoo, Ha, Sangsu, Pae, Sangwoo and Park, Jongwoo, Proc. Int. Rel. Phys. Symp., pp. 2F.3.1 - 2F.3.5 (2015).Google Scholar
Huiling Shang, , Jain, S., Josse, E., Alptekin, E., Nam, M.H., Kim, S.W., Cho, K.H., Kim, I., Liu, Y., Yang, X., Wu, X., Ciavatti, J., Kim, N.S., Vega, R., Kang, L., Meer, H.V., Samavedam, S., Celik, M., Soss, S., Utomo, H., Ramachandran, R., Lai, W., Sardesai, V., Tran, C., Kim, J. Y., Park, Y. H., Tan, W. L., Shimizu, T., Joy, R., Strane, J., Tabakman, K., Lalanne, F., Montanini, P., Babich, K., Kim, J. B., Economikos, L., Cote, W., Reddy, C., Belyansky, M., Arndt, R., Kwon, U., Wong, K., Koli, D., Levedakis, D., Lee, J. W., Muncy, J., Krishnan, S., Schepis, D., Chen, X., Kim, B. D., Tian, C., Linder, B. P., Cartier, E., Narayanan, V., Northrop, G., Menut, O., Meiring, J., Thomas, A., Aminpur, M., Park, S. H., Lee, K. Y., Kim, B. Y., Rhee, S. H., Hamieh, B., Srivastava, R., Koshy, R., Goldberg, C., Pallachalil, M., Chae, M., Ogino, A., Watanabe, T., Oh, M., Mallela, H., Codi, D., Malinge, P., Weybright, M., Mann, R., Mittal, A., Eller, M., Lian, S., Li, Y., Divakaruni, R., Bukofsky, S., Kim, J. D., Sudijono, J., Neumueller, W., Matsuoka, F., Sampson, R., VLSI Technology Symposium, pp. 129–130 (2012).Google Scholar
Kerber, A., Cartier, E., Pantisano, L., Rosmeulen, M., Degraeve, R., Kauerauf, T., Groeseneken, G., Maes, H.E., Schwalke, U., Proc. Int. Rel. Phys. Symp., pp. 41–45 (2003).CrossRefGoogle Scholar
Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H. E. and Schwalke, U., IEEE Electron Device Letters, Vol. 24, No.2, pp. 87–89 (2003).Google Scholar
Reisinger, H., Blank, O., Heinrigs, W., Mühlhoff, A., Gustin, W., and Schlünder, C., Proc. Int. Rel. Phys. Symp., pp. 448–453 (2006).Google Scholar
Kerber, Andreas; Maitra, Kingsuk; Majumdar, Amlan; Hargrove, Mike; Carter, Rick J.; Cartier, Eduard Albert, IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3175–3183 (2008).Google Scholar
Kerber, A., Pantisano, L., Veloso, A., Groeseneken, G., and Kerber, M., Microelectronics Reliability, Volume 47, Issues 4-5, pp. 513–517 (2007).CrossRefGoogle Scholar
Kerber, Andreas, Krishnan, Siddarth A., and Cartier, Eduard Albert, IEEE Electron Device Letters, Vol. 30, No. 12, pp. 1347–1349 (2009).Google Scholar
Kerber, A., Cartier, E., Linder, B.P., Krishnan, S.A., Nigam, T., Proc. Int. Rel. Phys. Symp., pp. 505–509 (2009).Google Scholar
McMahon, W., Tian, C., Uppal, S., Kothari, H., Jin, M., LaRosa, G., Nigam, T., Kerber, A., Linder, B. P., Cartier, E., Lai, W. L., Liu, Y., Ramachandran, R., Kwon, U., Parameshwaran, B., Krishnan, S., Narayanan, V., Proc. Int. Rel. Phys. Symp., pp. 4C.4.1 - 4C.4.4 (2013).Google Scholar
Liu, Wen, Wu, Ernest, Guarin, Fernando, Griffin, Charles, Dufresne, Roger, Badami, Dinesh, Shinosky, Michael, Brochu, David, Proc. Int. Rel. Phys. Symp., pp. 7A-3-1- 7A-3-5 (2016).Google Scholar
Monsieur, F., Vincent, E., Roy, D., Bruyere, S., Vildeuil, J.C, Pananakakis, G., Ghibaudo, G., Proc. Int. Rel. Phys. Symp., pp. 45–54 (2002).Google Scholar
Kerber, A., Röhner, M., Pompl, T., Duschl, R., Kerber, M., Proc. Int. Rel. Phys. Symp., pp. 217 – 220 (2007).Google Scholar
Nigam, T., Kerber, A., Peumans, P., Proc. Int. Rel. Phys. Symp., pp. 523 – 530 (2009).Google Scholar
Kerber, Andreas and Cartier, Eduard Albert, IEEE Transaction on Device and Materials Reliability, Vol. 9, No. 2, pp. 147–162 (2009).Google Scholar
Kerber, A., Microelectronics Reliability, Vol. 73, pp. 153–157 (2017).Google Scholar
Kaczer, B., Grasser, T., Roussel, Ph. J., Martin-Martinez, J., O’Connor, R., O’Sullivan, B. J., Groeseneken, G., Proc. Int. Rel. Phys. Symp., pp. 20–27 (2008).Google Scholar
Kerber, A. and Nigam, T., VLSI Technology Symposium, pp. 44–45 (2016).Google Scholar
Liu, W., La Rosa, G., Tian, C., Boffoli, S., Guarin, F., Lai, W. L., Narayanan, V., Kothari, H., Jin, M., Uppal, S., McMahon, W., Proc. Int. Rel. Phys. Symp., pp. XT.6.1 – XT.6.5 (2014).Google Scholar
Kerber, A., Microelectronics Reliability, Vol 64, pp. 145–151 (2016).Google Scholar
Stewart, E. III, IEEE Trans. Device Mater. Reliab. Vol. 7, No. 4, pp. 524–530 (2007).Google Scholar
Kerber, A., IEEE Electron Device Letters, Vol. 35, No. 3, pp. 294–296 (2014).Google Scholar
Kaczer, B., Grasser, T., Roussel, Ph. J., Franco, J., Degraeve, R., Ragnarsson, L.-A., Simoen, E., Groeseneken, G., Reisinger, H., Proc. Int. Rel. Phys. Symp., pp. 26–32 (2010).Google Scholar
Prasad, C., Jiang, L., Singh, D., Agostinelli, M., Auth, C., Bai, P., Eiles, T., Hicks, J., Jan, C. H., Mistry, K., Natarajan, S., Niu, B., Packan, P., Pantuso, D., Post, I., Ramey, S., Schmitz, A., Sell, B., Suthram, S., Thomas, J., Tsai, C., Vandervoorn, P., Proc. Int. Rel. Phys. Symp., pp. 5D.1.1 - 5D.1.5 (2013).Google Scholar
Su, L. T., Chung, J. E., Antoniadis, D. A., Goodson, K. E., and Flik, M. I., IEEE Trans. Electron Devices, vol. 41, no. 1, pp. 69–75 (1994).CrossRefGoogle Scholar
Mittl, S. and Guarin, F., Proc. Int. Rel. Phys. Symp., pp. 4A.4.1 - 4A.4.6 (2015).Google Scholar
Kerber, A., Srinivasan, P., Cimino, S., Paliwoda, P., Chandrashekhar, S., Chbili, Z., Uppal, S., Ranjan, R., Mahmud, M.-I., Singh, D., Manik, P.P., Johnson, J., Guarin, F., Nigam, T., Parameshwaran, B., Proc. Int. Rel. Phys. Symp., pp. 2D.3.1 – 2D.3.8 (2017).Google Scholar
Kerber, A., Wan, X., Liu, Y., Nigam, T., IEEE Trans. Electron Devices, vol. 62, no. 5, pp. 1427–1432 (2015).Google Scholar