Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-24T08:25:43.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantum wires by direct laser fabrication

Published online by Cambridge University Press:  23 May 2016

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A. Center for Security Printing and Anti-Counterfeiting Technology, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*(Email: [email protected])
Get access

Abstract

For optoelectronic device applications, quantum wires can be used as active media due to their unique physical properties. However, conventional approaches such as the self-assembly via the Stranski-Krastanov (S-K) growth technique have a limited success in their applications toward optoelectronic devices including photovoltaics and solar cells. A novel fabrication mechanism for quality quantum wires has been discovered. The laser fabricated nanowires semiconductor surfaces can have width and height as small as 30 and 5 nm, respectively while the density is one per 200 nm.

Keywords

nanostructurescanning probe microscopy (SPM)self-assembly
Type
Articles
Information
MRS Advances , Volume 1 , Issue 28: Nanotechnology , 2016 , pp. 2065 - 2069
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Shchukin, V., Ledentsov, N.N., Bimberg, D., Epitaxy of Nanostructures, Springer, Berlin, 2003.Google Scholar
Yang, H., Ballet, P., Salamo, G.J., Formation of quantum wires and dots on InP(001) by As/P exchange, Journal of Applied Physics, 89 (2001) 7871–7874.CrossRefGoogle Scholar
Zhang, C., Miao, X., Mohseni, P.K., Choi, W., Li, X., Site-Controlled VLS Growth of Planar Nanowires: Yield and Mechanism, Nano Letters, 14 (2014) 6836–6841.CrossRefGoogle ScholarPubMed
Shank, C.V., Schmidt, R.V., Optical technique for producing 0.1-μ periodic surface structures, Applied Physics Letters, 23 (1973) 154–155.CrossRefGoogle Scholar
Chen, Z., Wonsik, C., Mohseni, P.K., Xiuling, L., InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy, Electron Device Letters, IEEE, 36 (2015) 663–665.Google Scholar
Fortuna, S.A., Wen, J., Chun, I.S., Li, X., Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable, Nano Letters, 8 (2008) 4421–4427.CrossRefGoogle ScholarPubMed
Yang, H., Direct laser patterning of GaAs(001) surfaces, MRS Online Proceedings Library, 1628 (2014).CrossRefGoogle Scholar
Clegg, C.M., Yang, H., Guided assembly of quantum dots through selective laser heating, Solar Energy Materials and Solar Cells, 108 (2013) 252–255.CrossRefGoogle Scholar
Rezek, B., Nebel, C.E., Stutzmann, M., Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization, Journal of Applied Physics, 91 (2002) 4220–4228.CrossRefGoogle Scholar
Savas, T.A., Farhoud, M., Smith, H.I., Hwang, M., Ross, C.A., Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography, Journal of Applied Physics, 85 (1999) 6160–6162.CrossRefGoogle Scholar
Zhao, W., Verhoef, R.W., Asscher, M., Diffusion of potassium on Re(001) investigated by coverage grating-optical second-harmonic diffraction, J. Chem. Phys., 107 (1997) 5554–5560.CrossRefGoogle Scholar