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Molecular Dynamics Studies of the Melting of Copper with Vacancies amd Dislocations at High Pressures

Published online by Cambridge University Press:  15 May 2017

Clarence C Matthai  and
Jessica Rainbow
Clarence C Matthai*
Affiliation:
School of Physics and Astronomy, Cardiff UniversityCardiff, UK.
Jessica Rainbow
Affiliation:
School of Physics and Astronomy, Cardiff UniversityCardiff, UK.
*
*(Email: [email protected])
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Abstract

Molecular dynamics simulations of the melting process of bulk copper were performed using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) with the interatomic potentials being described by the embedded atom method. The aim of the study was to understand the effects of high pressures and defects on the melting temperature. The simulations were visualised using Visual Molecular Dynamics (VMD). The melting temperature of a perfect copper crystal, was found to be slightly higher than the experimentally observed value. The melting temperature as a function of pressure was determined and compared with experiment. Point and line defects, in the form of dislocations, were then introduced into crystal and the new melting temperature of the crystal determined. We find that the melting temperature decreases as the defect density is increased. Additionally, the slope of the melting temperature curve was found to decrease as the pressure was increased while the vacancy formation energy increases with pressure.

Keywords

phase transformationdefectsdislocations
Type
Articles
Information
MRS Advances , Volume 2 , Issue 48: Characterization, Theory and Modeling , 2017 , pp. 2597 - 2602
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Lindemann, F. A., Z. Phys. 11 609 (1910).Google Scholar
March, N. H., Chulkov, E. V., Echenique, P. M. and Matthai, C. C., Phase Transitions 83 1085 (2010)CrossRefGoogle Scholar
Simon, F. E. and Glatzel, G, Z. Anorg. Allg. Chem. 178 309 (1929).Google Scholar
Bundy, F. P. and Strong, H. M., in Solid State Physics 13, edited Seitz, F. and Turnbull, D. (Academic Press, New York, 1962), p. 81.Google Scholar
Matthai, C.C. and March, N.H., Philos. Mag. Lett. 87 475 (2007).CrossRefGoogle Scholar
Burakovsky, L., Preston, D. L. and Silbar, R. R., J. Appl. Phys. 88 6294 (2000).CrossRefGoogle Scholar
LAMMPS Molecular Dynamics Simulator (2016). Available at: http://lammps.sandia.gov (accessed 19 April 2016).Google Scholar
Mei, J., Davenport, J. W., Fernardo, G. W., Phys. Rev. B: Condens.Matter, 43 4653 (1991).Google Scholar
Brand, H., Dobson, D. P., Vocaldo, L. and Wood, I. G., High Press. Res. 26 185 (2006).Google Scholar
Japel, S., Schwager, B., Boehler, R. and Ross, M., Phys. Rev. Lett. 95 167801 (2005).Google Scholar
Frolov, T., Olmstead, D. L., Asta, M. and Mishin, Y., Nat. Commun. 4 1899 (2013).Google Scholar
Frolov, T., Asta, M and Mishin, Y., Phys Rev B 92 020103 (2015).Google Scholar
von Alfthan, S., Haynes, P. D., Kaski, K. and Sutton, A. P., Phys. Rev. Lett. 96, 055505 (2006).CrossRefGoogle Scholar