Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T04:21:21.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Modification of Electronic and Vibrational Properties of Doped Black-P Films

Published online by Cambridge University Press:  13 June 2016

Sayan Sarkar ,
Prashant K Sarswat  and
Michael L. Free
Sayan Sarkar
Affiliation:
Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT84112, USA
Prashant K Sarswat*
Affiliation:
Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT84112, USA
Michael L. Free
Affiliation:
Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT84112, USA
*
*(Email: [email protected])
Get access

Abstract

Black phosphorus (black-P) research has been the most absent for 100 years since its date of first synthesis in 1914 among all the polymorphs of phosphorus. However, recently it has been re-examined due to its specific puckered single layer geometry. Few or single atomic layer forms of black-P can be isolated using techniques such as micromechanical or liquid exfoliation. However, the exfoliation techniques limit the use of black-P, hence a method of black-P layer deposition onto a substrate is needed. Few or atomic layer deposition of black-P leads to substrate-material interactions and a possible appearance of a band gap opening at the K point. Hence, a series of experiments were conducted in order to grow black-P on different substrates. With the incorporation of doping elements, there was substantial modification in the vibrational and electrical properties. It was observed that sulfur and boron doped films exhibit improved electrical and electronic properties as compared to pristine black-P. Density functional theory predicts significant changes in the band structure and density of states as a consequence of doping. The effects of doping was also reflected in Raman A1g mode. The shift in peak position was also found to be consistent with molar mass of dopants.

Keywords

crystal growthdopantP
Type
Articles
Information
MRS Advances , Volume 1 , Issue 32: Nanotechnology , 2016 , pp. 2285 - 2290
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chou, T.D., Lee, T.W., Chen, S.L., Tung, Y.M., Dai, N.T., Chen, S.G., Lee, C.H., Chen, T.M. and Wang, H.J., Burns. 27, 492 (2001).Google Scholar
Li, L., Yu, Y., Ye, G.J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X.H. and Zhang, Y., Nat. Nanotech. 9, 372 (2014).Google Scholar
Liu, H., Neal, A.T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., and Ye, P. D., ACS Nano. 8, 4033 (2014).CrossRefGoogle Scholar
Lv, H.Y., Lu, W.J., Shao, D.F. and Sun, Y.P., arXiv.org, e-Print Arch., Condens. Matter. 1–17 arXiv:1404.5171v1401 [cond-mat.mtrl-sci] (2014).Google Scholar
Fei, R., Faghaninia, A., Soklaski, R., Yan, J.A., Lo, C. and Yang, L., arXiv.org, e-Print Arch., Condens. Matter. 1–22 arXiv:1405.2836v1401 [cond-mat.mtrl-sci] (2014).Google Scholar
Maity, A., Singh, A. and Sen, P., arXiv.org, e-Print Arch., Condens. Matter. 1–7 arXiv:1404.2469v1401 [cond-mat.mtrl-sci] (2014).Google Scholar
Hultgren, R., Gingrich, N. S. and Warren, B. E., J. Chem. Phys. 3, 351 (1935).Google Scholar
Thurn, H. and Kerbs, H., Angew. Chem., Int. Ed. 5, 1047 (1966).Google Scholar
Tran, V. and Yang, L., Phys. Rev. B. 89, 245407 (2014).Google Scholar
Wang, L., Kutana, A., Zou, X., and Yakobson, B. I., Nanoscale. 7, 9746 (2015).Google Scholar
Jiang, J.W. and Park, H. S., J. Phys. D: Appl. Phys. 47, 385304 (2014).Google Scholar
Murilla, C.A., Cotton, F.A., Wilkinson, G. and Bochmann, M., Adv. Inorg. Chemistry, 6th ed. (Wiley, New Delhi, 2007) p. 93.Google Scholar
Monkhorst, H.J. and Pack, J.D., Physical Review B. 13 (12), 5188 (1976).Google Scholar
Perdew, J. P., Burke, K. and Ernzerhof, M., Physical Review Letters. 77 (18), 3865 (1996).Google Scholar
Grimme, S., Journal of Computational Chemistry. 27 (15), 1787 (2006).Google Scholar
Sarswat, P. K. and Free, M.L., J. Mater. Sci. 50 (4), 1613 (2015).Google Scholar
Keyes, R.W., Physical Review. 92 (3), 580 (1953).Google Scholar
Sarswat, P. K., Sarkar, S., Bhattacharyya, D., Cho, J., Free, M. L., Ceramics International, 2016, doi:10.1016/j.ceramint.2016.05.099 Google Scholar