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Memristive behavior inBaTiO3/La0.7Sr0.3MnO3heterostructures integrated with semiconductors

Published online by Cambridge University Press:  26 January 2016

Srinivasa Rao Singamaneni ,
John Prater ,
Bongmook Lee ,
Veena Misra  and
Jay Narayan
Srinivasa Rao Singamaneni*
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709, USA
John Prater
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709, USA
Bongmook Lee
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Veena Misra
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Jay Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
*
*(Email: [email protected])
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Abstract

Ferroelectric materials such as BaTiO3 have been studied for emergingnon-volatile memory applications. However, most of the previous work has beenfocused on this material when it was deposited on insulting oxide substratessuch as SrTiO3. Unfortunately, this substrate is not suitable forCMOS-based microelectronics applications. This motivated us to carry out thepresent work. We have studied the resistive switching behavior inBaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO)heterostructures integrated with semiconducting substrates Si (100) usingMgO/TiN buffer layers by pulsed laser deposition. Current-Voltage (I-V)measurements were conducted on BTO (500nm)/LSMO (25nm) devices at 200K. We haveobserved a broad hysteresis in forward and reverse voltage sweeps which is animportant property for memory applications. Secondly, theRON/ROFF ratio is estimated at ∼ 150,consistent with the reported numbers (30-100) in the literature. Thirdly, thedevice is stable at least up to 50 cycles. However, we found that hystereticbehavior was suppressed upon oxygen annealing of the device at 1 atmosphericpressure, 200° C for 1hr, inferring the important role ofoxygen vacancies in the resistive switching behavior of BTO/LSMO device. Futurework will focus on investigating the correlation between ferroelectricity andresistive switching in these devices using local probe technique piezo forcemicroscopy (PFM) technique.

Keywords

thin filmSioxide
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 275 - 280
Copyright
Copyright © Materials Research Society 2016 

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References

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