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Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication

Published online by Cambridge University Press:  26 June 2018

L.K. Nanver ,
K. Lyon ,
X. Liu ,
J. Italiano  and
J. Huffman
L.K. Nanver*
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands Aalborg University, Aalborg, Denmark
K. Lyon
Affiliation:
KLA-Tencor Corporation , Milpitas, CA, United States
X. Liu
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
J. Italiano
Affiliation:
Lawrence Semiconductor Research Laboratory, Tempe, AZ, United States
J. Huffman
Affiliation:
Lawrence Semiconductor Research Laboratory, Tempe, AZ, United States
*
*(Email: [email protected])
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Abstract

The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400°C were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450°C and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen, and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

Keywords

BSielectrical propertiesinterfacechemical vapor deposition (CVD) (chemical reaction)
Type
Articles
Information
MRS Advances , Volume 3 , Issue 57-58: Electronic and Photonic Materials , 2018 , pp. 3397 - 3402
Copyright
Copyright © Materials Research Society 2018 

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References

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