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Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Devices

Published online by Cambridge University Press:  16 January 2017

Narasimhan Srinivasan ,
Katrina Rook ,
Ivan Berry ,
Binyamin Rubin  and
Frank Cerio
Narasimhan Srinivasan
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
Katrina Rook*
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
Ivan Berry
Affiliation:
Etch Product Group, Lam Research Corporation, 4400 Cushing Parkway, Fremont, CA 95438
Binyamin Rubin
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
Frank Cerio
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
*
*(Email: [email protected])
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Abstract

We investigate the feasibility of inert ion beam etch (IBE) for subtractive patterning of ReRAM-type structures. We report on the role of the angle-dependent ion beam etch rates in device area control and the minimization of sidewall re-deposition. The etch rates of key ReRAM materials are presented versus incidence angle and ion beam energy. As the ion beam voltage is increased, we demonstrate a significant enhancement in the relative etch rate at glancing incidence (for example, by a factor of 2 for HfO2). Since the feature sidewall is typically exposed to glancing incidence, this energy-dependence plays a role in optimization of the feature shape and in sidewall re-deposition removal.

We present results of SRIM simulations to estimate depth of ion-bombardment damage to the TMO sidewall. Damage is minimized by minimizing ion energy; its depth can be reduced by roughly a factor of 5 over typical IBE energy ranges. For example, ion energies of less than ∼250 eV are indicated to maintain damage below ∼1nm. Multi-angle and multi-energy etch schemes are proposed to maximize sidewall angle and minimize damage, while eliminating re-deposition across the TMO. We utilize 2-D geometry/3-D etch model to simulate IBE patterning of tight-pitched ReRAM features, and generate etched feature shapes.

Keywords

ion-beam processingoxidememory
Type
Articles
Information
MRS Advances , Volume 2 , Issue 4: Electronics, Magnetics and Photonics , 2017 , pp. 247 - 252
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Wong, H.-S. P., Lee, H.-Y., Yu, S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T. and Tsai, M.-J., Proc. IEEE 100(6), 1951–1970 (2012).CrossRefGoogle Scholar
Chang, T.-C., Chang, K.-C., Tsai, T.-M., Chu, T.-J. and Sze, S. M., Mater. Today 19(5), 254–264 (2016).Google Scholar
Delprat, S., Chaker, M., and Margot, J., J. Appl. Phys. 89(1), 29–33 (2001).Google Scholar
Williams, K. R., Gupta, K., and Wasilik, M., J. Microelectromech. Syst. 12(6), 761–778 (2003).CrossRefGoogle Scholar
Ip, V., Huang, S., Carnevale, S. D., Berry, I. L., Rook, K., Lill, T. B., Paranjpe, A. J., and Cerio, F., IEEE Trans. Mag. (in-print 2016), DOI: 10.1109/TMAG.2016.2603921.Google Scholar
Ziegler, J. F., Biersack, J. P., Siegler, M. D., “SRIM The Stopping and Range of Ions in Matter, Lulu Press, Morrisville, NC, 2008 (www.SRIM.org).Google Scholar
7.Lam Sputter Etch Simulator 12.3.0.0 (accessed 2016).Google Scholar